Journal of Semiconductors, Volume. 44, Issue 7, 070101(2023)

Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)

Shibing Long1,*... Genquan Han2,**, Yuhao Zhang3,***, Yibo Wang4,**** and Zhongming Wei5,***** |Show fewer author(s)
Author Affiliations
  • 1School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
  • 2School of Microelectronics, Xidian University, Xi’an 710071, China
  • 3Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Blacksburg, VA 24060, USA
  • 4Platform for Characterization & Test, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
  • 5Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • show less
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    Shibing Long, Genquan Han, Yuhao Zhang, Yibo Wang, Zhongming Wei. Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Power Devices and DUV Optoelectronic Devices (Ⅱ)[J]. Journal of Semiconductors, 2023, 44(7): 070101

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Articles

    Received: Jun. 26, 2023

    Accepted: --

    Published Online: Aug. 7, 2023

    The Author Email: Shibing Long (shibinglong@ustc.edu.cn), Genquan Han (gqhan@xidian.edu.cn), Yuhao Zhang (yhzhang@vt.edu), Yibo Wang (ybwang2022@sinano.ac.cn), Zhongming Wei (zmwei@semi.ac.cn)

    DOI:10.1088/1674-4926/44/7/070101

    Topics