Laser & Optoelectronics Progress, Volume. 57, Issue 3, 032501(2020)

Ion Beam Polishing Equivalent Removal and Polishing Experiments

Yuning Wang, Shilei Jiang*, Guobin Sun, Weiguo Liu, and Xiaogang Dang
Author Affiliations
  • School of Photoelectric Engineering, Xi'an Technological University, Xi'an, Shaanxi 710021, China
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    Figures & Tables(14)
    Diagram of the fitted removal function
    Diagram of the raster path scan
    Simulation of different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.5σ; (c) stacking spacing is 2σ
    Fluctuation value curve
    One-dimensional equivalent-etching results of ion beams with different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.2σ; (c) stacking spacing is 1.5σ
    One-dimensional equivalent removal contour of ion beams with different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.2σ; (c) stacking spacing is 1.5σ
    Simulation of two-dimensional equivalent removal. (a) Top view; (b) side view
    Two-dimensional equivalent removal results. (a) Etching result; (b) etching profile
    Surface shape before ion beam modification
    Dwell time distribution map
    Dwell time distribution map after continuation
    Simulated processing result
    Full-caliber surface shape after ion beam modification
    Surface shape of 85% aperture after ion beam modification
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    Yuning Wang, Shilei Jiang, Guobin Sun, Weiguo Liu, Xiaogang Dang. Ion Beam Polishing Equivalent Removal and Polishing Experiments[J]. Laser & Optoelectronics Progress, 2020, 57(3): 032501

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    Paper Information

    Category: OPTOELECTRONICS

    Received: Sep. 20, 2019

    Accepted: Nov. 13, 2019

    Published Online: Feb. 17, 2020

    The Author Email: Jiang Shilei (jiangshilei8@163.com)

    DOI:10.3788/LOP57.032501

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