Laser & Optoelectronics Progress, Volume. 57, Issue 3, 032501(2020)
Ion Beam Polishing Equivalent Removal and Polishing Experiments
Fig. 1. Diagram of the fitted removal function
Fig. 2. Diagram of the raster path scan
Fig. 3. Simulation of different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.5σ; (c) stacking spacing is 2σ
Fig. 4. Fluctuation value curve
Fig. 5. One-dimensional equivalent-etching results of ion beams with different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.2σ; (c) stacking spacing is 1.5σ
Fig. 6. One-dimensional equivalent removal contour of ion beams with different stacking spacings. (a) Stacking spacing is σ; (b) stacking spacing is 1.2σ; (c) stacking spacing is 1.5σ
Fig. 7. Simulation of two-dimensional equivalent removal. (a) Top view; (b) side view
Fig. 8. Two-dimensional equivalent removal results. (a) Etching result; (b) etching profile
Fig. 9. Surface shape before ion beam modification
Fig. 10. Dwell time distribution map
Fig. 11. Dwell time distribution map after continuation
Fig. 12. Simulated processing result
Fig. 13. Full-caliber surface shape after ion beam modification
Fig. 14. Surface shape of 85% aperture after ion beam modification
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Yuning Wang, Shilei Jiang, Guobin Sun, Weiguo Liu, Xiaogang Dang. Ion Beam Polishing Equivalent Removal and Polishing Experiments[J]. Laser & Optoelectronics Progress, 2020, 57(3): 032501
Category: OPTOELECTRONICS
Received: Sep. 20, 2019
Accepted: Nov. 13, 2019
Published Online: Feb. 17, 2020
The Author Email: Jiang Shilei (jiangshilei8@163.com)