Opto-Electronic Engineering, Volume. 33, Issue 12, 141(2006)

Influence of InP layer on responsivity of the front and back illuminated PIN photo diodes

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    References(13)

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Influence of InP layer on responsivity of the front and back illuminated PIN photo diodes[J]. Opto-Electronic Engineering, 2006, 33(12): 141

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    Paper Information

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    Received: Mar. 8, 2006

    Accepted: --

    Published Online: Nov. 14, 2007

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