[3] [3] Jia-zhou,CHEN Yi-qiao,SHUI Qiong,et al.Fabrication of high performance In0.53Ga0.47As PIN

[4] [4] photodectors[J].Journal of functional materials and devices,2002,8(1):45-48.

[6] [6] Shi-long,LIAO Yun,WU Yun-feng,et al.Comparative study of two kinds of InGaAs/InP PIN

[7] [7] photodetectors[J].Opto-Electronic Engineering,2004,31(12):30-33.

[8] [8] MAKIUCHI M,HAMAGUCHI H,MIKAWA T,et al.Easily manufactured high-speed back-illuminated

[9] [9] InGaAs/InP p-i-n photodiode[J].Photonics Technology Letters,1991,3(6):530-531.

[11] [11] Jing-zhong.Semiconductor Optoelectronics Technology[M].Beijing:Chemistry Industry

[12] [12] Press,2003.

[13] [13] S.RAMO.Fields and waves in communication electronics[M].New York:Wiley,1967.

[14] [14] S.M.SZE.Physics of Semiconductor Devices (Second Edition)[M].New York:John Wiley &

[15] [15] Sons,1981.

[17] [17] En-ke,ZHU Bing-sheng,LUO Jin-sheng,et al.Semiconductor Physics[M].Xi'an:Xi'an Jiao Tong

[18] [18] University Press,1998.