Laser & Optoelectronics Progress, Volume. 60, Issue 17, 1714007(2023)
Research on Optimization of p-Type Waveguide Layer and Active Region of InGaN-Based Blue Laser Diodes
Fig. 1. Schematic diagram of blue LD standard structure and new structure
Fig. 2. Simulated and experimental L-I-V curves of standard structures
Fig. 3. L-I-V characteristic curves of standard structure and three new structures
Fig. 4. Lasing spectra of standard structure and three new structures at current of 1.5 A
Fig. 5. Energy band diagrams at current of 1.5 A. (a) Standard structure; (b) new structure C
Fig. 6. Carrier current density of standard structure and new structure C at current of 1.5 A. (a) Electron current density; (b) hole current density
Fig. 7. Stimulated recombination rate of standard structure and new structure C at current of 1.5 A
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Lan Shi, Shuping Li. Research on Optimization of p-Type Waveguide Layer and Active Region of InGaN-Based Blue Laser Diodes[J]. Laser & Optoelectronics Progress, 2023, 60(17): 1714007
Category: Lasers and Laser Optics
Received: Aug. 4, 2022
Accepted: Sep. 13, 2022
Published Online: Sep. 13, 2023
The Author Email: Li Shuping (lsp@xmu.edu.cn)