Laser & Optoelectronics Progress, Volume. 60, Issue 17, 1714007(2023)

Research on Optimization of p-Type Waveguide Layer and Active Region of InGaN-Based Blue Laser Diodes

Lan Shi and Shuping Li*
Author Affiliations
  • College of Physical Science and Technology, Xiamen University, Xiamen 361005, Fujian , China
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    Figures & Tables(8)
    Schematic diagram of blue LD standard structure and new structure
    Simulated and experimental L-I-V curves of standard structures
    L-I-V characteristic curves of standard structure and three new structures
    Lasing spectra of standard structure and three new structures at current of 1.5 A
    Energy band diagrams at current of 1.5 A. (a) Standard structure; (b) new structure C
    Carrier current density of standard structure and new structure C at current of 1.5 A. (a) Electron current density; (b) hole current density
    Stimulated recombination rate of standard structure and new structure C at current of 1.5 A
    • Table 1. Photoelectric characteristics of four structures

      View table

      Table 1. Photoelectric characteristics of four structures

      StructureThreshold voltage /VThreshold current /mASlope efficiency /(W·A-1Light output power /W
      Standard structure3.44221.31.401.82
      New structure A3.44220.01.692.19
      New structure B3.46224.32.012.58
      New structure C3.46225.42.112.69
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    Lan Shi, Shuping Li. Research on Optimization of p-Type Waveguide Layer and Active Region of InGaN-Based Blue Laser Diodes[J]. Laser & Optoelectronics Progress, 2023, 60(17): 1714007

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Aug. 4, 2022

    Accepted: Sep. 13, 2022

    Published Online: Sep. 13, 2023

    The Author Email: Li Shuping (lsp@xmu.edu.cn)

    DOI:10.3788/LOP222235

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