[1] [1] G. D. Wilka, R. M. Wallaceb, J. M. Anthony. High-k gate dielectrics: current status and materials properties considerations[J]. J. Appl. Phys., 2001, 89(10): 5243～5275

[2] [2] M. Houssa, L. Pantisano, L.-A. Ragnarsson et al.. Electrical properties of high-k gate dielectrics: challenges, current issues, and possible solutions[J]. Materials Science & Engineering R, 2006, 51: 37～85

[3] [3] P. Taechakumput, S. Taylor, O. Buiu et al.. Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition[J]. Microelectronics Reliability, 2007, 47: 825～829

[4] [4] Liu Shijie, Kong Weijin, Shen Zicai et al.. Rigorous vector analysis of multi-layer dielectric film pulse compression gratings[J]. Acta Optica Sinica, 2006, 26(5): 652～656

[5] [5] Gu Shaoxuan, Hu Haiping, Guo Haitao et al.. Second-order optical nonlinearity of electrical poling in GeS2-Ga2S3-CdS chalcogenide glass[J]. Chin. J. Lasers, 2006, 33(5): 687～691

[6] [6] Liu Jing, Sun Junqiang, Huang Dexiu et al.. Influence on resonant tunneling spectral character of two-dimensional magnetic optical quantum wells[J]. Chin. J. Lasers, 2007, 34(5): 649～654

[7] [7] Xiong Zhihua, Rao Jianping, Jiang Fengyi. Density functional calculations of electronic structure and optical properties on Mg and Ni-doped CdS[J]. Acta Optica Sinica, 2007, 27(12): 2225～2228

[8] [8] Zhang Fuchun, Deng Zhouhu, Yan Junfeng et al.. First-principles calculation of electronic structure and optical properties of ZnO[J]. Acta Optica Sinica, 2006, 26(8): 1203～1209

[9] [9] Xinyuan Zhao, David Vanderbilt. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide[J]. Phys. Rev. B, 2002, 65: 233106-1～233106-4

[10] [10] Puthenkovilakam R, Chang J P. An accurate determination of barrier heights at the HfO2/Si interfaces[J]. J. Appl. Phys., 2004, 96: 2701～2707

[11] [11] H. Kato, T. Nango, T. Miyagawa et al.. Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films[J]. J. Appl. Phys., 2002, 92: 1106～1111

[12] [12] R. Terki, H. Feraoun, G. Bertrand et al.. First principles calculations of structural, elastic and electronic properties of XO2 (X=Zr, Hf and Th) in fluorite phase[J]. Computational Materials Science, 2005, 33: 44～52

[13] [13] J. Dabrowski, V. Zavodinsky, A. Fleszar. Pseudopotential study of PrO2 and HfO2 in fluorite phase[J]. Microelectron. Reliab, 2001, 41: 1093～1096

[14] [14] Shang G, Peacock P W, Robertson J. Stability and band offsets of nitrogenated high-dielectric-constant gate oxides[J]. Appl. Phys. Lett., 2004, 84: 106～108

[15] [15] Sammntarary C B, Sim H, Hwang H. First-principles study of electronic structure and electron energy-loss-spectroscopy (EELS) of transition-metal aluminates as high-k gate dielectrics[J]. Appl. Surf. Sci., 2005, 242: 121～128

[16] [16] V. Pervak, F. Krausz, A. Apolonski. Hafnium oxide thin films deposited by reactive middle-frequency dual-magnetron sputtering[J]. Thin Solid Films, 2007, 515: 7984～7989

[17] [17] G. He, L. Q. Zhu, M. Liu et al.. Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films[J]. Appl. Surf. Sci., 2007, 253: 3413～3418

[18] [18] Jaan Aarik, Hugo Mandar, Marco Kirm et al.. Optical characterization of HfO2 thin films grown by atomic layer deposition[J]. Thin Solid Films, 2004, 466: 41～47

[19] [19] Masahiro Koike, Tsunehiro Ino, Yuuichi Kamimuta et al.. Dielectric properties of noncrystalline HfSiON[J]. Phys. Rev. B, 2006, 73: 125123-1～125123-6