Photonics Research, Volume. 8, Issue 9, 1409(2020)

Structural color switching with a doped indium-gallium-zinc-oxide semiconductor

Inki Kim1、†, Juyoung Yun2、†, Trevon Badloe1, Hyuk Park2, Taewon Seo2, Younghwan Yang1, Juhoon Kim1, Yoonyoung Chung2,5, and Junsuk Rho1,3,4、*
Author Affiliations
  • 1Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
  • 2Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
  • 3Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
  • 4National Institute of Nanomaterials Technology (NINT), Pohang 37673, South Korea
  • 5e-mail: ychung@postech.ac.kr
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    Inki Kim, Juyoung Yun, Trevon Badloe, Hyuk Park, Taewon Seo, Younghwan Yang, Juhoon Kim, Yoonyoung Chung, Junsuk Rho. Structural color switching with a doped indium-gallium-zinc-oxide semiconductor[J]. Photonics Research, 2020, 8(9): 1409

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    Paper Information

    Category: Optical and Photonic Materials

    Received: Apr. 21, 2020

    Accepted: Jun. 21, 2020

    Published Online: Jul. 27, 2020

    The Author Email: Junsuk Rho (jsrho@postech.ac.kr)

    DOI:10.1364/PRJ.395749

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