Chinese Journal of Lasers, Volume. 49, Issue 23, 2301002(2022)

Influence of Indium Layer Defects on Temperature Distribution of Innoslab Laser Crystal

Yuguang Huang1,2, Yongxi Gao1,2, Jie Guo1, and Xiaoyan Liang1、*
Author Affiliations
  • 1State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(8)
    Schematic of laser crystal and pump
    Three-dimensional temperature distribution of crystal with ideal indium layers
    Relationship between maximum temperature of crystal and pump power
    Temperature distribution of crystal. (a) Temperature distribution in X direction; (b) temperature distribution in Y direction; (c) temperature distribution in Z direction
    Influence of defect size on crystal temperature distribution. (a) Schematic of defective indium layer and crystal; (b)-(d) temperature distributions in X, Y, and Z directions at defect center with different defect sizes
    Temperature distribution in X direction when defect with radius r=0.75 mm is separately distributed at (0, 0, 1.1 mm), (-1.5 mm, 0, 1.1 mm), (-3 mm, 0, 1.1 mm) and (-4.5 mm, 0, 1.1 mm)
    Influence of two defects with distances of 1 mm, 3 mm and 4 mm on temperature distribution and their separate influence
    Influence of two defects with distance of 1 mm on temperature distribution in X direction and sum of influence on temperature distribution in X direction when two defects act independently
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    Yuguang Huang, Yongxi Gao, Jie Guo, Xiaoyan Liang. Influence of Indium Layer Defects on Temperature Distribution of Innoslab Laser Crystal[J]. Chinese Journal of Lasers, 2022, 49(23): 2301002

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    Paper Information

    Category: laser devices and laser physics

    Received: Jan. 14, 2022

    Accepted: Mar. 21, 2022

    Published Online: Nov. 21, 2022

    The Author Email: Liang Xiaoyan (liangxy@siom.ac.cn)

    DOI:10.3788/CJL202249.2301002

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