Laser & Optoelectronics Progress, Volume. 53, Issue 2, 23101(2016)
Structural Analysis of GexAsySe1-x-y Chalcogenide Glass Thin-Films by Raman Spectroscopy
Thin films of GexAsySe1-x-y chalcogenide glasses with different chemical compositions are deposited by thermal evaporation from bulk material in various GexAsySe1-x-y thin films. The Raman spectroscopy of GexAsySe1-x-y chalcogenide glass films is studied to understand the influence of chemical composition on internal film structure. The evolution of Raman features in the wavenumber range from 100 cm-1 to 350 cm-1 is analyzed. The Raman features are fitted into different peak-fitting functions. The intensity of Ge-Se vibrational mode at 190 cm-1 increases with the increasing of concentration of Ge and As. With the increasing of the mean coordination number (MCN), the intensity of As-Se vibrational mode decreases. Meanwhile, the two Raman shift modes located at 225 cm-1 and 250 cm-1 gradually merge and extend to high wavenumber for high MCN samples. In addition, in the films with high Ge content, the Raman features in the wavenumber range from 170 cm-1 to 180 cm-1 is caused by the defect modes.
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Li Chenghan, Wang Li, Gan Yulin, Su Xueqiong. Structural Analysis of GexAsySe1-x-y Chalcogenide Glass Thin-Films by Raman Spectroscopy[J]. Laser & Optoelectronics Progress, 2016, 53(2): 23101
Category: Thin Films
Received: Jul. 16, 2015
Accepted: --
Published Online: Dec. 25, 2015
The Author Email: Chenghan Li (lichenghan11@163.com)