Acta Physica Sinica, Volume. 68, Issue 23, 239401-1(2019)

Review of charge deposition characteristics and trap parameters of dielectric in space electron radiation environment

Guo-Chang Li1,2 and Sheng-Tao Li2、*
Author Affiliations
  • 1Institute of Advanced Electrical Materials, Qingdao University of Science and Technology, Qingdao 266042, China
  • 2State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China
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    Figures & Tables(8)
    Schematic diagram of interaction between incident electron and dielectric material and energy loss: (a) Interaction between incident electron and dielectric material; (b) diagram of stopping power and penetration depth.入射电子与介质材料相互作用及能量损失示意图 (a) 入射电子与介质材料相互作用示意图; (b)阻止能量与穿透深度关系图
    The charge deposition rate distributions in typical insulation dielectric.典型绝缘介质内部电荷沉积速率分布
    Schematic diagram of charge transfer model under electron beam radiation: (a) RIC model; (b) GR model.电子束辐射下介质内部电荷迁移模型示意图 (a) RIC模型; (b) GR模型
    Space charge decay curve of polyimide treated by electron radiation treatment: (a) The upper surface of the sample is treated; (b) the bottom surface of the sample is treated.电子辐射处理后PI空间电荷衰减曲线 (a) 电子辐射处理试样上表面; (b) 电子辐射处理试样下表面
    Schematic diagram of space charge in situ measurement setup under electron beam radiation: (a) Short circuit PEA; (b) open circuit PEA.电子束辐射下绝缘介质空间电荷原位测量装置示意图 (a) 短路PEA; (b) 开路PEA
    Surface potential measuring system of insulation under electron radiation.电子辐射下绝缘介质表面电位测量系统
    Trap energy spectrum distribution of PI under electron radiation with different energies[34].不同能量电子辐射下PI陷阱能谱分布图[34]
    • Table 1.

      Comparison of calculation methods of trap parameters.

      绝缘介质陷阱参数提取方法对比

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      View in Article

      Table 1.

      Comparison of calculation methods of trap parameters.

      绝缘介质陷阱参数提取方法对比

      方法基本原理优缺点
      等温表面电位衰减法(ISPD)采用电晕注入或电子辐射方式向介质表层注入电荷, 通过测量等温电位衰减曲线, 提取陷阱参数.优点: 可以区分电子陷阱和空穴陷阱[39,45]; 电子辐射注入方 式更适合空间介质材料陷阱参数的测量[28,34]. 缺点: 电荷注入深度较浅(约1—2 μm), 主要反映材料表面 或 表层陷阱信息; 不适用于较厚试样[46].
      热刺激电流法(TSC)采用热刺激或光刺激使介质内部被捕获电荷脱陷, 通过分析电流特征峰, 提取陷阱参数.优点: 反映材料内部陷阱信息; 可以区分陷阱能级[39,47]. 缺点: 无法区分陷阱类型.
      电声脉冲法(PEA)通过分析去压后总电荷量随时间的衰减规律, 提取陷阱参数.优点: 可以反映介质内部电荷动态过程[9,10,47]. 缺点: 无法区分陷阱类型; 计算模型有待完善.
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    Guo-Chang Li, Sheng-Tao Li. Review of charge deposition characteristics and trap parameters of dielectric in space electron radiation environment[J]. Acta Physica Sinica, 2019, 68(23): 239401-1

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    Paper Information

    Received: Aug. 19, 2019

    Accepted: --

    Published Online: Sep. 17, 2020

    The Author Email:

    DOI:10.7498/aps.68.20191252

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