Semiconductor Optoelectronics, Volume. 41, Issue 2, 151(2020)
Research Progresses of Radiation Damage Experiments in Laser Diodes
[1] [1] Petree M C. Degradation of luminescence in neutron-irradiated GaAs diodes[J]. Appl. Phys. Lett., 1963, 3(4): 67.
[2] [2] Millea M F, Aukerman L W. The role of diffusion current in the electroluminescence of GaAs diodes[J]. Appl. Phys. Lett., 1964, 5(8): 168-169.
[3] [3] Saji M, Inuishi Y. Radiation damage and annealing of GaAs laser diode[J]. Jap. J. of Appl. Phys., 1965, 4(10): 830-831.
[4] [4] Compton D M J, Cesena R A. Mechanisms of radiation effects on lasers[J]. IEEE Trans. on Nuclear Science, 1967, 14(6): 55-61.
[5] [5] Barnes C E. Effects of 60Co gamma irradiation on epitaxial GaAs laser diodes[J]. Phys. Rev. B, 1970, 1(12): 4735-4747.
[6] [6] Barnes C E. Neutron damage in epitaxial GaAs laser diodes[J]. J. of Appl. Phys., 1971, 42(5): 1941-1949.
[7] [7] Barnes C E. Neutron damage in GaAs laser diodes: at and above laser threshold[J]. IEEE Trans. on Nuclear Science, 1972, 19(6): 382-385.
[8] [8] Schroeder J O, Noel B W. Neutron irradiation effects on diffused GaAs laser diodes[J]. IEEE Trans. on Nuclear Science, 1973, 20(6): 261-265.
[9] [9] Minden H T. Effects of proton bombardment on the properties of GaAs laserdiodes[J]. J. of Appl. Phys., 1976, 47(3): 1090-1094.
[10] [10] Carson R F, Chow W W. Neutron effects in high-power GaAs laser diodes[J]. IEEE Trans. on Nuclear Science, 1989, 36(6): 2076-2082.
[11] [11] Frueholz F P, Camparo J C, Delcamp S B, et al. Effects of neutron fluence on the operating characteristics of diode lasers used in atomic frequency standards[J]. IEEE Trans. on Nuclear Science, 1990, 37(6): 39-43.
[12] [12] Evans B D, Hager H E, Hughlock B W. 5.5MeV proton irradiation of a strained quantum-well laser diode and a multiple quantum-well broad-band LED[J]. IEEE Trans. on Nuclear Science, 1993, 40(6): 1645-1654.
[13] [13] Baggio J, Brisset C, Sommer J L, et al. Electrical and optical response of a laser diode to transient ionizing radiation[J]. IEEE Trans. on Nuclear Science, 1996, 43(3): 1038-1043.
[14] [14] Zhao Y F, Patwary A R. 200MeV proton damage effects on multi-quantum well laser diodes[J]. IEEE Trans. on Nuclear Science, 1997, 44(6): 1898-1904.
[15] [15] Taylor E W, Paxton A H, Schone H, et al. In vacuo responses of an AlGaAs vertical cavity surface emitting laser irradiated by 4.5MeV protons[J]. IEEE Trans. on Nuclear Science, 1998, 45(3): 1514-1517.
[16] [16] Johnston A H. Proton displacement damage in light-emitting and laser diodes[J]. IEEE Trans. on Nuclear Science, 2001, 48(5): 1713-1720.
[17] [17] Johnston A H, Miyahira T F. Radiation degradation mechanisms in laser diodes[J]. IEEE Trans. on Nuclear Science, 2004, 51(6): 3564-3571.
[18] [18] Durand Y, Culoma A, Meynart R, et al. Performance of high-power laser diode arrays for spaceborne lasers[J]. Appl. Opt., 2006, 45(22): 5752-5757.
[19] [19] Boutillier M, Gauthier-Lafaye O, Bonnefont S, et al. Electron irradiation effects on Al-free laser diodes emitting at 852nm[J]. IEEE Trans. on Nuclear Science, 2007, 54(4): 1110-1114.
[20] [20] Boutillier M, Gauthier-Lafaye O, Bonnefont S, et al. First evaluation of proton irradiation effects on InAs/InP quantum dash laser diodes emitting at 1.55μm[J]. IEEE Trans. on Nuclear Science, 2008, 55(4): 2243-2247.
[21] [21] Boutillier M, Gauthier-Lafaye O, Bonnefont S, et al. Measurement of irradiation impact on carrier lifetime in a quantum well laser diode[J]. IEEE Trans. on Nuclear Science, 2009, 56(4): 2155-2159.
[22] [22] Troska J, Detraz S, Nasr-Storey S S E, et al. Radiation damage studies of laser and photodiodes for use in multi-Gb/s optical data links[J]. IEEE Trans. on Nuclear Science, 2011, 58(6): 3103-3110.
[23] [23] Lin Libin, Huang Wanxia, Kong Meiying. Deep energy defect in AlGaAs/GaAs quantum well material introduced by particle beam irradiation[J]. J. of Synthetic Crystals, 2000, 29(5): 248.
[26] [26] Chang Guolong. The study of the influence of radiation effect on laser diodes[D]. Harbin: Harbin Institute of Technol., 2010.
[27] [27] Ma Jing, Che Chi, Han Qiqi, et al. Displacement damage effect on the charecteristics of quantum well laser[J]. Acta Phys. Sin., 2009, 21(9): 1405-1410.
[28] [28] Xin G, Shengsheng Y. Radiation damage characterization of InGaAsP laser diodes for space laser communication[J]. Nuclear Phys. Rev., 2015, 32(2): 249-253.
[29] [29] Ma Chuanhe. Research on I-V characteristics and optical spectrum of quantum dot lasers[D]. Qufu: Qufu Normal University, 2011.
[30] [30] Che Chi, Liu Qingfeng, Ma Jing, et al. Displacement damage effects on the characteristics of quantum dots lasers[J]. Acta Phys. Sin.. 2013, 62(9): 1-6.
[31] [31] Arakawa Y, Sakaki H. Multidimensional quantum well laser and temperature dependence of its threshold current[J]. Appl. Phys. Lett., 1982, 40(11): 939-941.
[32] [32] Hirayama H. Lasing action of Ga0.67In0.33As/GaInAsP/InP tesile strained quantum box laser[J]. Electron Lett., 1994, 30: 142-144.
[33] [33] Piva P G, Goldberg R D, Mitchell I V, et al. Enhanced degradation resistance of quantum dot lasers to radiation damage[J]. Appl. Phys. Lett., 2000, 77(5): 624-626.
[34] [34] Leon R, Marcinkevicius S, Siegert J, et al. Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled quantum dots[J]. IEEE Trans. on Nuclear Science, 2002, 49(6): 2844-2851.
[35] [35] Mares J W, Harben J, Thompson A V, et al. Gamma radiation induced degradation of operating quantum dot lasers[J]. IEEE Trans. on Nuclear Science, 2008, 55(2): 763-768.
[36] [36] Fauzi D A, Md Rashid N K A, Mohamed Zin M R, et al. Neutron radiation effects on the electrical characteristics of InAs/GaAs quantum dot-in a-well structure[J]. IEEE Trans. on Nuclear Science, 2015, 62(6): 3324-3329.
[37] [37] Wang Jun, Gao Xin, Feng Zhanzu, et al. Radiation damage effect of quantum dot laser with space optical communication[J]. Vacuum and Cryogenics, 2019, 25(1): 41-45.
Get Citation
Copy Citation Text
WANG Zujun, NING Hao, XUE Yuanyuan, XU Rui, JIAO Qianli, LIU Minbo, YAO Zhibin, MA Wuying, SHENG Jiangkun, DONG Guantao. Research Progresses of Radiation Damage Experiments in Laser Diodes[J]. Semiconductor Optoelectronics, 2020, 41(2): 151
Category:
Received: Oct. 16, 2019
Accepted: --
Published Online: Jun. 17, 2020
The Author Email: Zujun WANG (wangzujun@nint.ac.cn)