Chinese Optics Letters, Volume. 15, Issue 6, 062401(2017)
Optical rectification and Pockels effect as a method to detect the properties of Si surfaces
Fig. 4. Distribution of EFI OR signals along the depth direction in the Si(110) crystal. The experimental results (a) before and (b) after reversing the two {110} surfaces of the Si crystal are in good accordance. The blue solid lines are the theoretical simulation curves.
Fig. 5. EFI PE signals in (a) the No. 1 surface layer and (b) the No. 2 surface layer of the Si(110) crystal.
Fig. 6. (a) Band structure of the Si(110) crystal after contact with the Al electrodes. (b) Distribution of the built-in electric field in the SCR of the Si surface layers. The dashed lines represent the boundary of the SCR.
Fig. 7. Intensity distribution of the Gaussian beam on the
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Qi Wang, Li Zhang, Xin Wang, Haiyan Quan, Zhanguo Chen, Jihong Zhao, Xiuhuan Liu, Lixin Hou, Yanjun Gao, Gang Jia, Shaowu Chen. Optical rectification and Pockels effect as a method to detect the properties of Si surfaces[J]. Chinese Optics Letters, 2017, 15(6): 062401
Category: Optics at Surfaces
Received: Dec. 7, 2016
Accepted: Feb. 24, 2017
Published Online: Jul. 20, 2018
The Author Email: Zhanguo Chen (czg@jlu.edu.cn)