Acta Photonica Sinica, Volume. 53, Issue 11, 1104001(2024)

Preparation of Cs3Cu2Br5/n-Si Heterojunction Deep Ultraviolet Photodetector via Vacuum Thermal Evaporation Technique

Shunli HE1... Xianling MENG1, Ning CAO2, Bin XIA2, Chuanlong SUN2, Ruhan LUAN2, and Lichun ZHANG12,* |Show fewer author(s)
Author Affiliations
  • 1School of Integrated Circuits,Ludong University,Yantai 264025,China
  • 2School of Physics and Optoelectronic Engineering,Ludong University,Yantai 264025,China
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    Figures & Tables(11)
    XRD of Cs3Cu2Br5 thin films grown at different substrate temperatures
    Surface SEM images of Cs3Cu2Br5 thin films grown at different substrate temperatures
    EDS spectrum of Cs3Cu2Br5 thin film
    The absorption spectrum of Cs3Cu2Br5 thin film grown at 50 ℃,and the absorption spectrum of Cs3Cu2Br5 thin films grown at different substrate temperatures
    PL and PLE spectra of Cs3Cu2Br5 thin films deposited at 50 ℃
    PL spectra of Cs3Cu2Br5 thin films grown at different substrate temperatures and Diagram of the relationship between the full width at half height (FWHM) of PL and temperature
    Structural schematic of heterojunction device
    Current voltage curve (logarithmic form) and on/off ratio curve of Cs3Cu2Br5/Si photodetector under dark and light conditions (illustration)
    The current-voltage curves of Cs3Cu2Br5/n-Si devices under different light intensities under I-V bias voltage and Spectral responsivity and detection rate of Cs3Cu2Br5/Si device under -1 V bias voltage (illustration)
    Band of Cs3Cu2Br5/n-Si according to Anderson model
    • Table 1. Performance comparisons of DUV photodetector devices by Cu-based perovskite

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      Table 1. Performance comparisons of DUV photodetector devices by Cu-based perovskite

      Device structureWavelength/nmR/(mA·W-1D*/(×108 Jones)Bias/VOn/off ratioRef.
      Cs3Cu2I5/Au200~32517.8×1031.12×1045——16
      Cs3Cu2I5/Si-core/shell NWs200~1 2001303.1×1040~1×10517
      Cs3Cu2I5/n-Si28070.80.944×104-1.313018
      Au/CsCu2I3/Au340492.49×10423 15019
      Au/Rb2CuBr3/Au2651131.23×1045——20
      Cs3Cu2Br5/Si2700.4720.9-1192This work
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    Shunli HE, Xianling MENG, Ning CAO, Bin XIA, Chuanlong SUN, Ruhan LUAN, Lichun ZHANG. Preparation of Cs3Cu2Br5/n-Si Heterojunction Deep Ultraviolet Photodetector via Vacuum Thermal Evaporation Technique[J]. Acta Photonica Sinica, 2024, 53(11): 1104001

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    Paper Information

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    Received: Apr. 1, 2024

    Accepted: Sep. 30, 2024

    Published Online: Jan. 8, 2025

    The Author Email: ZHANG Lichun (phyzlc@163.com)

    DOI:10.3788/gzxb20245311.1104001

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