Researching | Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

Chinese Optics Letters, Volume. 14, Issue 5, 052301(2016)

Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

Jingbo Liu, Pingjian Li^*, Yuanfu Chen^**, Xinbo Song, Fei Qi, Binjie Zheng, Jiarui He, Qiye Wen, and Wanli Zhang

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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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Cited By

[1] Jun Wu. Enhancement of terahertz absorption in graphene monolayer with Bragg grating and metallic film. Journal of Nanophotonics, 13, 1(2019).

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Jingbo Liu, Pingjian Li, Yuanfu Chen, Xinbo Song, Fei Qi, Binjie Zheng, Jiarui He, Qiye Wen, Wanli Zhang. Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss[J]. Chinese Optics Letters, 2016, 14(5): 052301

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Paper Information

Category: Optical devices

Received: Dec. 18, 2015

Accepted: Mar. 4, 2016

Published Online: Aug. 6, 2018

The Author Email: Pingjian Li (lipingjian@uestc.edu.cn), Yuanfu Chen (yfchen@uestc.edu.cn)

DOI:10.3788/COL201614.052301

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology