Photonics Research, Volume. 4, Issue 3, 0126(2016)

Photonic integrated circuit components based on amorphous silicon-on-insulator technology

Timo Lipka*, Lennart Moldenhauer, J?rg Müller, and Hoc Khiem Trie
Author Affiliations
  • Institute of Microsystems Technology, Hamburg University of Technology, 21073 Hamburg, Germany
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    Figures & Tables(17)
    Calculated coupling efficiencies and 3 dB bandwidth of shallow-etch (SE) GCs with/without DBR and of the AGC.
    Measured coupling efficiency of the AGCs with a micrograph and simulation inset.
    Propagation loss measurements for the TE0 mode. Inset: Mask layout of the meandered waveguides indicating a writing field.
    Power splitting of DCs for different coupler lengths with schematic (inset).
    Bar and cross-port signals of an MZI.
    Spectral characterization of add/drop microring filters: Microring with (a) 5 μm radius and (b) 10 μm radius.
    Q-factor and finesse of 5 and 10 μm radius add/drop filters measured for different coupling gaps.
    (a) Even and odd supermodes of the asymmetric DC with electric field inset. (b) Mode indices of TE0, TM0, and TE1 versus waveguide widths illustrating the PSR principle.
    (a) Measurement setup and micrograph of the PSR. (b) PSR measurements with arbitrary input polarization and polarizer cube set to TE (x axis) and TM (y axis).
    Measured tuning efficiency of microheaters placed on top of a 10 μm resonator with microscope picture (inset).
    Resonance shift due to modifications of the effective mode index. Resonance trimming of an uncladded 10 μm MRR blueshifted in 1 nm increments.
    Racetrack-based multiplexer TOE aligned to the 100 GHz DWDM grid with micrograph inset.
    Through- and drop-port spectra of a wavelength-trimmed eight-channel multiplexer with micrograph.
    (a) Spectral disorder of as-fabricated and trimmed OADMs. (b) Static power consumption for the eight-channel assignments of as-fabricated and trimmed OADMs.
    (a) Micrographs of a 4×4 photonic router and a MRR-switch. (b) Static measurements with inputs (I1−4) and output ports (O1−4) from top to bottom: Row 1: I1−O1−3. Row 2: I2−O2,3,4. Row 3: I3−O1,2,4. Row 4: I4−O2−4.
    • Table 1. Nonuniform AGC Parameters

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      Table 1. Nonuniform AGC Parameters

      Duty cycle123456789101112131415161718
      Bar (μm)0.600.560.560.570.570.560.550.550.540.540.540.530.530.530.500.420.450.61
      Gap (μm)0.180.180.180.180.200.240.220.200.200.200.230.240.240.250.350.260.23
    • Table 2. Linear Loss Comparison of a-SOI/c-SOI Photonic Wires

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      Table 2. Linear Loss Comparison of a-SOI/c-SOI Photonic Wires

      Ref.MaterialDim. (nm2)CladdingLoss (dB/cm)
      [30]a-/c-SOI (DUV)500×220SiO24.5/4
      [31]c-SOI (EBL)500×220HSQ0.92
      [32]a-SOI (EBL)470×220SiO21.2
      [33]c-SOI (DUV)450×220I-line (SiO2)5.74 (2.84)
      This worka-SOI (EBL)480×200I-line3.25
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    Timo Lipka, Lennart Moldenhauer, J?rg Müller, Hoc Khiem Trie. Photonic integrated circuit components based on amorphous silicon-on-insulator technology[J]. Photonics Research, 2016, 4(3): 0126

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    Paper Information

    Special Issue: TERAHERTZ PHOTONICS: APPLICATIONS AND TECHNIQUES

    Received: Mar. 2, 2016

    Accepted: Apr. 1, 2016

    Published Online: Sep. 29, 2016

    The Author Email: Timo Lipka (timo.lipka@tuharburg.de)

    DOI:10.1364/prj.4.000126

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