Fig. 1. Schematic diagram of device structure and mechanism. (a) Switching and memristive mechanism; (b) device structure; (c) multilevel pain operating mechanism

Fig. 2. Film characterizations and its optoelectronic properties. (a) Optical (left) and AFM (right) microscopic characterization of film; (b) film polarization characterization at different sample angles; (c) EQE-wavelength curve; (d) light response in different wavelength bands; (e) I-V characteristics of device (left) and device noise (right)

Fig. 3. Synaptic behaviors under different stimulation patterns. (a) Subthreshold EPSC behavior (upper) and facilitation behavior (lower) evoked by extremely week single- and double-pulse stimulus; (b) interval-dependent dynamic facilitation behavior; (c) multilevel pain induced by stimulus intensity

Fig. 4. Jumping characteristics of device operation modes and Si₃N₄ tunneling characteristics. (a) Continuous-pulse-induced jumping behaviors of device under different light intensities; (b) reconfigurable two-level pain mechanism; (c) conduction current-voltage sweep curve of 100 nm Si₃N₄ capacitor