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Semiconductor Optoelectronics, Volume. 42, Issue 1, 20(2021)

Study on GaN-based High Electron Mobility Transistor Ultraviolet Detector

ZHU Yanxu*... YANG Zhuang, LI Lailong, YANG Zhong and LI Qixuan |Show fewer author(s)
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    ZHU Yanxu, YANG Zhuang, LI Lailong, YANG Zhong, LI Qixuan. Study on GaN-based High Electron Mobility Transistor Ultraviolet Detector[J]. Semiconductor Optoelectronics, 2021, 42(1): 20

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    Paper Information

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    Received: Feb. 5, 2020

    Accepted: --

    Published Online: Mar. 18, 2021

    The Author Email: Yanxu ZHU (zhuyx@bjut.edu.cn)

    DOI:10.16818/j.issn1001-5868.2021.01.003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology