Chinese Optics Letters, Volume. 20, Issue 3, 031601(2022)

AgGeSbTe thin film as a negative heat-mode resist for dry lithography

Xingwang Chen1, Lei Chen1, Ying Wang1, Tao Wei1,2、*, Jing Hu1, Miao Cheng1, Qianqian Liu1、**, Wanfei Li1, Yun Ling1,3, and Bo Liu1、***
Author Affiliations
  • 1Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices, School of Materials Science and Engineering, Suzhou University of Science and Technology, Suzhou 215009, China
  • 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 3School of Electronic & Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China
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    Figures & Tables(5)
    (a) SEM image; (a1) AFM image of the exposed sample, (a2) magnified SEM image of developed sample; (b) corresponding cross-section curve; and (c) TEM cross-section image of AgGeSbTe heat-mode resist. For (a) and (b), the laser energy is 0.7 × 103 mJ/cm2. The gas flow ratio of CHF3/O2 is 60/2. The etching power is 200 W, and the chamber pressure is 50 mTorr with the time of 1 min. For (c), the laser energy is 1.2 × 103 mJ/cm2, and the etching time is 3 min.
    Dependence of (a) etching power, (b) developing time, and (c) laser power on linewidth and height of grating structures. For (a), the laser energy is 0.8 × 103 mJ/cm2. The gas flow ratio of CHF3/O2 is 60/2, and the chamber pressure is 50 mTorr with the time of 4 min. For (b), the laser energy is 0.7 × 103 mJ/cm2. The gas flow ratio of CHF3/O2 is 60/2, and the etching power is 200 W with the chamber pressure of 50 mTorr. For (c), the gas flow ratio of CHF3/O2 is 60/2, the etching power is 200 W, the chamber pressure is 50 mTorr, and the developing time is 3 min. The thickness of AgGeSbTe film is 250 nm.
    (a) Relationship between sheet resistance and temperature in AgGeSbTe thin film. (b) Thermal field distribution of heat-mode resist in thickness direction. (c) and (d) Temperature profiles in radius and thickness directions, respectively.
    (a) XRD patterns, (b) Raman data, and (c) XPS profiles of the as-deposited and laser-exposed AgGeSbTe films, where the exposed energy is 0.7 × 103 mJ/cm2.
    AFM cross-section profiles of (a) development, (b) etching of AgGeSbTe resist on Si substrate, and (c) etching of the pure Si, where the exposed energy is 1.2 × 103 mJ/cm2. For development of (a), the gas flow ratio of CHF3/O2 is 60/2. The etching power is 200 W, and the chamber pressure is 50 mTorr with the developing time of 3 min. Inset of (a) is SEM cross-section image of the developed sample. For Si etching of (b) and (c), the gas flow ratio of SF6/Ar is 15/35. The etching power is 150 W, and the chamber pressure is 50 mTorr with the etching time of 5 min.
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    Xingwang Chen, Lei Chen, Ying Wang, Tao Wei, Jing Hu, Miao Cheng, Qianqian Liu, Wanfei Li, Yun Ling, Bo Liu. AgGeSbTe thin film as a negative heat-mode resist for dry lithography[J]. Chinese Optics Letters, 2022, 20(3): 031601

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    Paper Information

    Category: Optical Materials

    Received: Nov. 17, 2021

    Accepted: Dec. 29, 2021

    Posted: Dec. 30, 2021

    Published Online: Jan. 26, 2022

    The Author Email: Tao Wei (weitao@usts.edu.cn), Qianqian Liu (liuqianqian@usts.edu.cn), Bo Liu (liubo@mail.usts.edu.cn)

    DOI:10.3788/COL202220.031601

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