Acta Physica Sinica, Volume. 68, Issue 19, 194206-1(2019)

Effect of capacitance on positive and negative symmetric pulse with fast rising edge based on GaAsphotoconductive semiconductor switch

Huai-Meng Gui1,2 and Wei Shi2、*
Author Affiliations
  • 1College Information Engineering, Shaanxi Polytechnic Institute, Xianyang 712000, China
  • 2Department of Applied Physics, Xi’an University of Technology, Xi’an 710048, China
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    Figures & Tables(7)
    Schematic diagram of GaAs PCSS.GaAs PCSS结构图
    Schematic diagram of scanning circuit.扫描电路结构图
    Testing test circuit of scanning circuit.扫描电路测试电路图
    The output waveforms of 33 pF capacitor at the bias voltage is ± 1.9 kV.储能电容为33 pF, 偏置电压为± 1.9 kV时的输出波形图
    The output waveforms at the bias voltage is ± 2.0 kV(insert is rising edge output waveform).外加偏置电压为± 2.0 kV时的输出波形图(插图为上升沿波形图)
    • Table 1. The voltage transmission efficiency of output waveformwith different energy storage capacitor.

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      Table 1. The voltage transmission efficiency of output waveformwith different energy storage capacitor.

      电容容值/pF传输效率/%
      ± 1.5 kV± 1.7 kV± 1.9 kV± 2.0 kV
      1050.447.246.944.3
      3372.471.168.566.2
      8278.676.273.972.1
      10089.392.292.992.6
    • Table 2. The rise time of output waveform with different energy storage capacitor.

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      Table 2. The rise time of output waveform with different energy storage capacitor.

      电容容值/pF上升时间/ps
      ± 1.5 kV± 1.7 kV± 1.9 kV± 2.0 kV
      10158159163149
      33174169175174
      82189198180190
      100380385352377
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    Huai-Meng Gui, Wei Shi. Effect of capacitance on positive and negative symmetric pulse with fast rising edge based on GaAsphotoconductive semiconductor switch[J]. Acta Physica Sinica, 2019, 68(19): 194206-1

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    Paper Information

    Received: Mar. 7, 2019

    Accepted: --

    Published Online: Sep. 16, 2020

    The Author Email:

    DOI:10.7498/aps.68.20190321

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