[1] [1] WANG Lijun, NING Yongqiang, QIN Li, et al. Development of high power diode laser［J］. Chinese Journal of Luminescence, 2015, 36(1): 119.

[2] [2] WANG Lijun,PENG Hangyu,ZHANG Jun,et al. Development of beam combining of high power high brightness diode lasers［J］. Infrared and Laser Engineering, 2017, 46(4): 0401001.

[3] [3] LI Jianlin, LEI Guangzhi, BAI Yang, et al. Activepassive double Qswitched 946 nm laser with MgO: LiNbO3 electrooptic crystaland Mose2 saturable absorber［J］. Acta Photonica Sinica, 2018, 47(5): 0514002.

[4] [4] LIU Xingsheng, WANG Jingwei, ZHANG Entao, et al. Technology trend and challenges in high power semiconductor laser packaging［J］. Infrared and Laser Engineering, 2009, 38(Supplement): 490497.

[5] [5] WANG Shiling, FANG Fengzhou. High power laser and it’s development［J］. Laser & Optoelectronics Progress, 2017, 54(9): 4558.

[6] [6] WANG Shuna, ZHANG Pu, XIONG Lingling, et al. Influence of temperature on “smile” in high power diode laser bars［J］. Acta Photonica Sinica, 2016, 45(5): 0514001.

[7] [7] LIAO Yiru, GUAN Baolu, LI Jianjun, et al. Thermal characteristics of the low threshold 852 nm semiconductor lasers［J］. Chinese Journal of Luminescence, 2017, 38(3): 331337.

[8] [8] XUE Zhengqun, WANG Linghua, SU Hui. Analysis the influence of temperature on the wavelength blue shift of InP laser［J］. Acta Photonica Sinica, 2018, 47(1): 0125002.

[9] [9] CRUMP P, WANG J, PATTERSON S, et al. Diode laser efficiency increases enable >400W peak power from 1cm bars and show a clear path to peak powers in excess of 1kW［C］. SPIE, 2006, 6104: 610409.

[10] [10] CRUMP P, ERBERT G, WENZEL H, et al. Efficient highpower laser diodes［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(4): 1501211.

[11] [11] MERCADO E, ADHIKARI D, SMOLYAKOV G A, et al. Lowtemperature characterization of a 1.55μm multiplequantumwell laser down to 10 K［C］. SPIE, 2013, 8619: 861913.

[12] [12] FREVERT C, CRUMP P, WENZEL H, et al. Efficiency optimization of high power diode lasers at low temperatures［C］. IEEE CLEO, 2013.

[13] [13] FREVERT C, CRUMP P, BUGGE F, et al. Lowtemperature optimized 940 nm diode laser bars with 1.98 kW peak power at 203 K［C］. IEEE CLEO, 2015.

[14] [14] SONG Yunfei, WANG Zhenfu, LI Te, et al. Efficiency analysis of 808 nm laser diode array under different operating temperatures［J］. Acta Physica Sinica, 2017, 66(10): 104202.

[15] [15] WU Dihai, ZHANG Pu, NIE Zhiqiang, et al. Optimization of microchannel cooler of high power diode laser array package［C］. SPIE, 2017, 10085: 100850I.

[16] [16] ZHANG Pu, KIM D S, HAN B. Deconvolution of spectral power distribution of highpower laser diode arrays［J］. Applied Optics, 2017, 56(20): 55905598.