Growth and Defects of LiGaO<sub>2</sub>Crystal Used for GaN Epitaxy

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 18, Issue 4, 499(1998)

Growth and Defects of LiGaO₂Crystal Used for GaN Epitaxy

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

Author Affiliations

[in Chinese]

show less

Abstract Get PDF(in Chinese)

References(2)

[1] [1] S. Nakanura, M. Senoh, S. Nagahama et al.. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime. Appl. Phys. Lett., 1997, 70(7): 868～870

[2] [2] F. A. Ponce, D. P. Bour, W. Gotz et al.. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition. Appl. Phys. Lett., 1997, 68(7): 917～922

Tools

Get Citation

Copy Citation Text

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Defects of LiGaO₂Crystal Used for GaN Epitaxy[J]. Acta Optica Sinica, 1998, 18(4): 499

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Materials

Received: Aug. 7, 1997

Accepted: --

Published Online: Oct. 18, 2006

The Author Email:

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology