[1] [1] G R Harrison, S W Thompson, H Kazukonis, et al.. 750-mm ruling engine producing large gratings and Echelles [J]. J Opt Soc Am, 1972, 62(6): 751-756.

[2] [2] Li Xiaotian, Bayanheshig, Qi Xiangdong, et al.. Influence and revising method of machine-ruling grating line′s curve error, location error on plane grating′ performance [J]. Chinese J Lasers, 2013, 40(3): 0308009.

[3] [3] Li Xiaotian, Bayanheshig, Qi Xiangdong, et al.. Two-dimensional Fourier transform method of analyzing the influence of plane grating′s line error and surface error on grating′s spectral performance [J]. Acta Optica Sinica, 2012, 32(11): 1105001.

[4] [4] Tan Xin, Li Wenhao, Bayanheshig, et al.. Fabrication of the ultraviolet holographic blazed grating [J]. Optics and Precision Engineering, 2010, 18(7): 1536-1544.

[5] [5] Wu Na, Tan Xin, Bayanheshig, et al.. Simulation of ion beam etching process in ion beam etched holographic grating [J]. Optics and Precision Engineering, 2012, 20(9): 1904-1912.

[6] [6] Tan Xin, Liu Ying, Xu Xiangdong, et al.. 13.9 nm Laminar grating as beam splitter [J]. Optics and Precision Engineering, 2009, 12(1): 33-37.

[7] [7] Han Jian, Bayanheshig, Li Wenhao, et al.. Wavefront aberration analysis of the interference image according to different axis alignment errors in the grating exposure system [J]. Acta Optica Sinica, 2012, 32(7): 0705002.

[8] [8] Han Jian, Bayanheshig, Li Wenhao, et al.. Profile evolution of grating masks according to exposure dose and interference fringe contrast in the fabrication of holographic grating [J]. Acta Optica Sinica, 2012, 32(3): 0305001.

[9] [9] Won-Tien Tsang, Shyh Wang. Preferentially etched diffraction gratings in silicon [J]. J Appl Phys, 1975, 46(5): 2163-2166.

[10] [10] R M A Azzam, N M Bashara. Polarization characteristics of scattered radiation from a diffraction grating by ellipsometry with application to surface roughness [J]. Phys Rev B, 1972, 5(12): 4721-4729.

[11] [11] J C Stover. Optical Scattering Measurement and Analysis [M]. Bellingham, WA: SPIE Optical Engineering Press, 1995.

[12] [12] Jing Chen, Litian Lin, Zhijian Li, et al.. Study of anisotropic etching of (100) Si with ultrasonic agitation [J]. Sensor Actuat A: Phys, 2002, 96(2): 152-156.

[13] [13] Chii-Rong Yang, Po-Ying Chen, Yuang-Cherng Chion, et al.. Effects of mechanical agitation and surfactant additive on silicon anisotropic etching in alkaline KOH solution [J]. Sensor Actuat A: Phys, 2005, 119(1): 263-270.

[14] [14] Theo Baum, David J Schiffrin. AFM study of surface finish improvement by ultrasound in the anisotropic etching of Si (100) in KOH for micromachining application [J]. J Micromech Microeng, 1997, 7(4): 338-342.

[15] [15] K Ohwada, Y Negoro, Y Konaka, et al.. Uniform groove-depths in (110) Si anisotropic etching by ultrasonic waves and application to accelerometer fabrication [J]. Sensor Actuat A: Phys, 1995, 50(1): 93-98.

[16] [16] I Zubel, M Kramkowska. The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions [J]. Sensor Actuat A, 2001, 93(2): 138-147.

[17] [17] S A Campbell, K Cooper, L Dixon, et al.. Inhibition of pyramid formation in the etching of Si P 〈100〉 in aqueous potassium hydroxide-isopropanol [J]. J Micromech Microeng, 1995, 5(3): 209-218.

[18] [18] C Strandman, L Rosengren, H G A Elderstig, et al.. Fabrication of 45° mirrors together with well-defined V-grooves using wet anisotropic etching of silicon [J]. J Microelectromech S, 1995, 4(4): 213-219.

[19] [19] Y Backlund, L Rosengren. New shapes in (100) Si using KOH and EDP etches [J]. J Micromech Microeng, 1992, 2(2): 75-79.

[20] [20] I Zubel. Silicon anisotropic etching in alkaline solutions III: on the possibility of spatial structures forming in the course of Si (100) anisotropic etching in KOH and KOH+IPA solutions [J]. Sensor Actuat A, 2000, 84(1): 116-125.

[21] [21] C Moldovan, R losub, D Dascalu, et al.. Anisotropic etching of silicon in complexant redox alkaline system [J]. Sensor Actuat B, 1999, 58(1-3): 438-449.

[22] [22] C Moldovan, R losub, M Modreanu. Elimination of silicon hillocks using an alkaline complexant etching system [J]. Int J Inorg Mater, 2001, 3(8): 1173-1176.

[23] [23] R Divan, H Camon, N Moldovan, et al.. Limiting roughness in anisotropic etching [C]. IEEE Semiconductor Conference, 1997, 2: 553-556.

[24] [24] R Divan, N Moldovan, H Camon. Roughning and smoothing dynamic during KOH silicon etching [J]. Sensor Actuat A, 1999, 74(1-3): 18-23.

[25] [25] I Zubel, I Barycka, K Kotowska, et al.. Silicon anisotropic etching in alkaline solutions IV: the effect of organic and inorganic agents on silicon anisotropic etching process [J]. Sensor Actuat A, 2001, 87(3): 163-171.

[26] [26] I Zubel, M Kramkowska. The effect of alcohol additives on etching characteristics in KOH solutions [J]. Sensor Actuat A, 2002, 101(3): 255-261.

[27] [27] Cui Zheng. Nanofabrication Technologies and Applications (2nd Edition) [M]. Beijing: Higher Education Press, 2009. 314-315.

[28] [28] J M Lai, W H Chieng, Y C Huang. Precision alignment of mask etching with respect to crystal orientation [J]. J Micromech Microeng, 1998, 8(4): 327-329.

[29] [29] R L Bristol, J A Britten, R Hemphill, et al.. Silicon diffraction gratings for use in the far and extreme-ultraviolet [C]. SPIE, 1997, 3114: 580-585.

[30] [30] S M Hu, D R Kerr. Observation of etching of n-type silicon in aqueous HF solutions [J]. J Electrochem Soc, 1967, 114(4): 414.

[31] [31] Minseung Ahn, Ralf K Heilmann, Mark L Schattenburg. Fabrication of ultrahigh aspect ratio freestanding gratings on silicon-on-insulator wafers [J]. J Vac Sci Technol B, 2007, 25(6): 2593-2597.

[32] [32] Minseung Ahn, Ralf K Heilmann, Mark L Schattenburg. Fabrication of 200 nm period blazed transmission gratings on silicon-on-insulator wafers [J]. J Vac Sci Technol B, 2008, 26(6): 2179-2182.

[33] [33] Chen Yong, Qiu Keqiang, Xu Xiangdong, et al.. Design and fabrication of 1000 line/mm soft X-ray freestanding blazed transmission gratings [J]. Acta Physica Sinica, 2012, 61(12): 120702.