Infrared and Laser Engineering, Volume. 35, Issue 6, 764(2006)

New type of SiO2 gate insulator a-Si TFT uncooled infrared detector

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    References(5)

    [1] [1] SCHIMERT T R,RATECLIFF D D,BRADY J F,et al.Low cost,low power uncooled a-Si-based micro infrared camera for unattended ground sensor application[C]//Proceedings of SPIE,Unattended Ground Sensor Technologies and Applications,1999,3713:101-111.

    [2] [2] MOTTIN E,BAIN A,MARTIN J L,et al.Uncooled amorphous silicon technology enhancement for 25 μm pixel pitchachievement[C]//Proceedings of SPIE,Infrared Technology and Applications ⅩⅩⅧ,2002,4820:200-207.

    [3] [3] TISSOT J L.Advanced IR detector technology development at CEA/LETI[J].Infrared Physics & Technology,2002,43(3):223-228.

    [5] [5] MACKENZIE K D,SNELL A J,FRENCK I,et al.Characterization and properties of optimized amorphous silicon field effect transistors[J].Appl Phys,1983,A31(2):87-92.

    [6] [6] STREET R A.Technology and Applications of Amorphous Silicon[M].New York:Springer,2000.

    CLP Journals

    [1] Qin Juanjuan, Shao Jingzhen, Liu Fengjuan, Fang Xiaodong. Crystallization of amorphous Si films by excimer laser annealing[J]. Infrared and Laser Engineering, 2015, 44(3): 959

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    [in Chinese], [in Chinese], [in Chinese]. New type of SiO2 gate insulator a-Si TFT uncooled infrared detector[J]. Infrared and Laser Engineering, 2006, 35(6): 764

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    Paper Information

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    Received: Jan. 15, 2006

    Accepted: Feb. 20, 2006

    Published Online: May. 23, 2007

    The Author Email: (刘兴明(1978-)男山东茌平人博士从事新型室温红外探测)

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