Journal of the Chinese Ceramic Society, Volume. 51, Issue 6, 1406(2023)
Low Angle Grain Boundaries in β-Ga2O3 Crystal Grown by EFG Method
[1] [1] VLLORA E G, SHIMAMURA K, YOSHIKAWA Y, et al. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping[J]. Appl Phys Lett, 2008, 92(20): 202120.
[2] [2] SHEN Hao, YIN Yinong, TIAN Kun, et al. Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors[J]. J Alloy Compd, 2018, 766: 601-608.
[4] [4] HIGASHIWAKI M, MURAKAMI H, KUMAGAI Y, et al. Current status of Ga2O3 power devices[J]. Jpn J Appl Phys, 2016, 55(12): 1202A1.
[5] [5] SASAKI K, HIGASHIWAKI M, KURAMATA A, et al. MBE grown Ga2O3 and its power device applications[J]. J Cryst Growth, 2013, 378: 591-595.
[6] [6] MU Wenxiang, JIA Zhitai, YIN Yanru, et al. High quality crystal growth and anisotropic physical characterization of β-Ga2O3 single crystals grown by EFG method[J]. J Alloy Compd, 2017, 714: 453-458.
[7] [7] MU Wenxiang, JIA Zhitai, YIN Yanru, et al. Solid-liquid interface optimization and properties of ultra-wide bandgap β-Ga2O3 grown by Czochralski and EFG methods[J]. CrystEngComm, 2019, 21(17): 2762-2767.
[8] [8] FU Bo, MU Wenxiang, ZHANG Jin, et al. A study on the technical improvement and the crystalline quality optimization of columnar β-Ga2O3 crystal growth by an EFG method[J]. CrystEngComm, 2020, 22(30): 5060-5066.
[9] [9] GELLER S. Crystal Structure of β-Ga2O3[J]. J Chem Phys, 1960, 33(3): 676-684.
[10] [10] MCCLUSKEY M D. Point defects in Ga2O3[J]. J Appl Phys, 2020, 127(10): 101101.
[11] [11] NAKAI K, NAGAI T, NOAMI K, et al. Characterization of defects in β-Ga2O3 single crystals[J]. Jpn J Appl Phys, 2015, 54(5): 051103.
[12] [12] UEDA O, IKENAGA N, KOSHI K, et al. Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process[J]. Jpn J Appl Phys, 2016, 55(12): 1202BD.
[13] [13] YAO Yongzhao, HIRANO K, SUGAWARA Y, et al. Observation of dislocations in thick β-Ga2O3 single-crystal substrates using Borrmann effect synchrotron X-ray topography[J]. APL Mater, 2022, 10(5): 051101.
[14] [14] KURAMATA A, KOSHI K, WATANABE S, et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth[J]. Jpn J Appl Phys, 2016, 55(12): 1202A2.
[15] [15] GAO Shang, WU Yueqin, KANG Renke, et al. Nanogrinding induced surface and deformation mechanism of single crystal β-Ga2O3[J]. Mater Sci Semicond Process, 2018, 79: 165-170.
[16] [16] WU Yueqin, GAO Shang, HUANG Han. The deformation pattern of single crystal β-Ga2O3 under nanoindentation[J]. Mater Sci Semicond Process, 2017, 71: 321-325.
[20] [20] YAO Yongzhao, SUGAWARA Y, SATO K, et al. Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations[J]. J Alloy Compd, 2022, 910: 164788.
[21] [21] POWELL A, JENNY J, MULLER S, et al. Growth of SiC substrates[J]. Int J High Speed Electr Syst, 2006, 16(3): 751-777.
[22] [22] POPLAWSKY J D, DUTTA P, GUTHREY H, et al. Directly linking low-angle grain boundary misorientation to device functionality for GaAs grown on flexible metal substrates[J]. ACS Appl Mater Interfaces, 2020, 12(9): 10664-10672.
[23] [23] AIDA H, NISHIGUCHI K, TAKEDA H, et al. Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method[J]. Jpn J Appl Phys, 2008, 47(11): 8506-8509.
[24] [24] LI Pengkun, BU Yuzhe, CHEN Duanyang, et al. Investigation of the crack extending downward along the seed of the β-Ga2O3 crystal grown by the EFG method[J]. CrystEngComm, 2021, 23(36): 6300-6306.
[25] [25] OHBA E, KOBAYASHI T, KADO M, et al. Defect characterization of β-Ga2O3 single crystals grown by vertical Bridgman method[J]. Jpn J Appl Phys, 2016, 55(12): 1202BF.
[26] [26] OHBA E, KOBAYASHI T, TAISHI T, et al. Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method[J]. J Cryst Growth, 2021, 556: 125990.
Get Citation
Copy Citation Text
WANG Pei, MU Wenxiang, HOU Tong, JIA Zhitai, TAO Xutang. Low Angle Grain Boundaries in β-Ga2O3 Crystal Grown by EFG Method[J]. Journal of the Chinese Ceramic Society, 2023, 51(6): 1406
Special Issue:
Received: Nov. 11, 2022
Accepted: --
Published Online: Aug. 13, 2023
The Author Email:
CSTR:32186.14.