Infrared and Laser Engineering, Volume. 51, Issue 1, 20211111(2022)

Review of mid-infrared on-chip integrated photonics (Invited)

Hongtao Lin... Boshu Sun, Hui Ma, Chuyu Zhong and Zezhao Ju |Show fewer author(s)
Author Affiliations
  • College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310063, China
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    Figures & Tables(10)
    (a) Thermo-optical (TO) modulator based on Ge-on-SOI waveguide platform [6]; (b) Si-on-sapphire TO modulator with PhC (photonic crystal) waveguide[7]; (c) TO modulator based on SOI with spiral waveguides arms. Inset shows the heater [8]; (d) 2×2 MZI TO switch[10]and; (e) Dual mode TO switch based on SOI MZI structure at 2 μm band[11]
    Thermo-optic modulator with doped-silicon heater[12]. (a) Microscope image, (b) the static response and (c) the dynamic response of the MZI modulator; (d) Microscope image, (e) the static response and (f) the dynamic response of the MRR-based modulator
    (a) Diagrams of silicon photonic circuits integrated with LiNbO3 thin plate, wafer, single die and basic circuit and the cross-section illustration of bonding[16]; (b) Integrated Ta2O5 -LiNbO3 rib waveguide[17]; (c) Mid-infrared electro-optic modulator based on Si-on-LiNbO3 waveguide[18]
    Changes of (a) refractive index and (b) absorption coefficient of silicon and germanium in the Mid--IR caused by free carrier; (c) Wavelength scaling of −Δn/Δk[23], the carrier concentration is fixed at 5×1017 cm−3
    (a), (b) carrier-injection modulators[24,26] and (c) carrier-depletion modulators based on SOI [27]; (d) Electro-optic modulator and electro-absorption modulator on Ge-on-Si [28]
    Graphene-chalcogenide modulator[4]. (a) The structure and working principle of the graphene Mid-IR waveguide modulator; (b) Measured and (c) simulated modulation depth of the device versus wavelength and bias (Unit: dB/mm)
    Performance of Mid-IR graphene-chalcogenide modulators[38]. (a) The Fermi-level-related optical absorption of a graphene layer across the Mid-IR band evaluated by the surface conductive model; (b) Simulation result of modulation depth for graphene mid-IR electro-absorption modulators (The white dashed line is zero modulation depth); (c) FOM (modulation depth/insertion loss) of the modulator (The black dashed line represents unity FOM)
    Mid-IR extrinsic silicon photodetectors. (a) B doped SOI detector; (b) SEM of the same device (Inset: Schematic diagram of a silicon waveguide); (c) Relationship between the reverse bias voltage and the photocurrent/response of the detectorat two micron wavelength range; (d) Eye diagram of the detector with voltage of 27 V[56, 69]
    Mid-infrared Black Phosphorus(BP) detector. (a)-(b) Structure of the silicon-based BP slow-light integrated detector; (c) Relationship between the power and the responsivity of the BP detector at three different wavelengths; (d) Current noise power density of the photonic crystal waveguide and the subwavelength grating waveguide BP photodetectors, respectively[52]
    • Table 1. Hybrid integrated photodetectors with different active materials on silicon

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      Table 1. Hybrid integrated photodetectors with different active materials on silicon

      TypeActive materialWavelength/ μm Responsivity/ A·W−13 dB bandwidth/ Hz Room temperature NEP/ pW·Hz−1/2aReference
      a在光电导器件或零偏下光电二极管,基本的噪声源是约翰逊噪声,通过器件的电阻进行计算。在施加偏置的光电二极管中,噪声通常由散粒噪声主导,通过暗电流计算表征。 b在计算石墨烯器件中的散粒噪声时,假定Fano因子为1/3。 c在离子掺杂的硅探测器中,由于器件之间存在较大的性能偏差(尤其是暗电流),提到的指标(响应度、带宽和NEP)通常是不同器件测试的结果,所以表中列出的是每个指标的最佳值。
      Heterogeneous integrated semiconductorsGaInAsSb on GaSb2.31.4N/A0.54[44-46]
      MQW on InP2.351.6N/A0.035[47-48]
      InAsSb on GaSb3.80.3N/A56[49]
      Monolithically integrated semiconductorsPbTe2.1-2.51.0N/A0.69[50]
      2-D Van der Waals materialsGraphene/Si juncton2.750.13N/A0.36 b[51]
      Graphene2.050.25N/A99[4]
      Black phosphorus3.811.310.55 K12[52]
      Ion-implanted siliconSi+ implated Si 2.2-2.30.011.7 G12.7 c[53]
      Zn+implanted Si 2.2-2.40.091.7 G11.2[54]
      Ar+ implanted Si 2.2-2.30.021N/A2.2[55]
      B+ implanted Si 1.96-2.50.315165[56]
      S+implated Si 3.36-3.740.002 2N/A1000[57]
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    Hongtao Lin, Boshu Sun, Hui Ma, Chuyu Zhong, Zezhao Ju. Review of mid-infrared on-chip integrated photonics (Invited)[J]. Infrared and Laser Engineering, 2022, 51(1): 20211111

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    Paper Information

    Category: Infrared technology and application

    Received: Dec. 25, 2021

    Accepted: --

    Published Online: Mar. 8, 2022

    The Author Email:

    DOI:10.3788/IRLA20211111

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