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Semiconductor Optoelectronics, Volume. 45, Issue 6, 898(2024)

Evolution of the Valence Band in Bulk Black Phosphorus Regulated by Temperature and Tensile Strain

DENG Yafeng1...2, ZHAO Yafei2,3, and HE Liang12 |Show fewer author(s)
Author Affiliations
  • 1School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, CHN
  • 2National Key Laboratory of Spintronics, Nanjing University, Suzhou 215163, CHN
  • 3School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, CHN
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    DENG Yafeng, ZHAO Yafei, HE Liang. Evolution of the Valence Band in Bulk Black Phosphorus Regulated by Temperature and Tensile Strain[J]. Semiconductor Optoelectronics, 2024, 45(6): 898

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    Received: Jul. 16, 2024

    Accepted: Feb. 28, 2025

    Published Online: Feb. 28, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2024071603

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology