Journal of Semiconductors, Volume. 45, Issue 3, 030201(2024)
2D black arsenic phosphorous
Fig. 1. (Color online) (a) b-AsxP1−x crystal. (b) The band structure of multilayer b-AsP. (c) Enlarged image of the energy band in (b), in which the band has been split into four sub-bands. Reproduced with permission[17], Copyright 2018, IOP Publishing. (d) b-As0.83P0.17 crystal synthesized by CVT. Reproduced with permission[7], Copyright 2015, WILEY-VCH. (e) AFM image for an exfoliated bilayer b-As0.83P0.17 flake. (f) Height profile for the exfoliated bilayer b-As0.83P0.17 flake with a thickness of ~1.3 nm. Reproduced with permission[8], Copyright 2019, Optical Society of America.
Fig. 2. (Color online) (a) The preparation of 2D b-AsP nanosheets by the liquid-phase exfoliation method. Reproduced with permission[11], Copyright 2020, American Chemical Society. (b) The MBD synthesis of b-AsP alloys. Reproduced with permission[12], Copyright 2018, American Chemical Society. (c) The hBN/b-As0.83P0.17/hBN heterostructure photodetector. (d) The cross-section of the device by TEM is shown on the left. The elemental mapping is shown on the right. Reproduced with permission[13], Copyright 2018, American Chemical Society.
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Junchuan Liang, Yi Hu, Liming Ding, Zhong Jin. 2D black arsenic phosphorous[J]. Journal of Semiconductors, 2024, 45(3): 030201
Category: Articles
Received: Jan. 17, 2024
Accepted: --
Published Online: Apr. 24, 2024
The Author Email: Ding Liming (LMDing), Jin Zhong (ZJin)