[1] Y YANG, W LIU, T HUANG et al. Low deposition temperature amorphous ALD-Ga2O3 thin films and decoration with MoS2 multilayers toward flexible solar-blind photodetectors. ACS Applied Materials & Interfaces, 13, 41802-41809(2021).

[2] A C LIU, C H HSIEH, C LANGPOKLAKPAM et al. State-of-the-art β-Ga2O3 field-effect transistors for power electronics. ACS Omega, 7, 36070-36091(2022).

[3] J ZHANG, P DONG, K DANG et al. Ultra-wide bandgap semiconductor Ga2O3 power diodes. Nature Communications, 13, 3900(2022).

[4] Z CHEN, K SAITO, T TANAKA et al. Near-infrared light-emitting diodes based on Tm-doped Ga2O3. Journal of Luminescence, 245, 118773(2022).

[5] A AFZAL. β-Ga2O3 nanowires and thin films for metal oxide semiconductor gas sensors: Sensing mechanisms and performance enhancement strategies. Journal of Materiomics, 5, 542-557(2019).

[6] Z LI, J CHEN, H TANG et al. Band gap engineering in β-Ga2O3 for a high-performance X-ray detector. ACS Applied Electronic Materials, 3, 4630-4639(2021).

[7] T OSHIMA, K KAMINAGA, H MASHIKO et al. β-Ga2O3 single crystal as a photoelectrode for water splitting. Japanese Journal of Applied Physics, 52, 111102(2013).

[8] B R TAK, S KUMAR, A K KAPOOR et al. Recent advances in the growth of gallium oxide thin films employing various growth techniques-a review. Journal of Physics D: Applied Physics, 54, 453002(2021).

[9] D J COMSTOCK, J W ELAM. Atomic layer deposition of Ga2O3 films using trimethylgallium and ozone. Chemistry of Materials, 24, 4011-4018(2012).

[10] E R BORUJENY, O SENDETSKYI, M D FLEISCHAUER et al. Low Thermal budget heteroepitaxial gallium oxide thin films enabled by atomic layer deposition. ACS Applied Materials & Interfaces, 12, 44225-44237(2020).

[11] X Y YANG, S M WEN, D D CHEN et al. First-principles study of the influence of Nb doping on the electronic structure and optoelectronic properties of β-Ga2O3. Physics Letters A, 433, 128025(2022).

[12] K YUAN, Z YU, L YANG et al. Near-infrared electroluminescence based on Nd-doped Ga2O3 nanolaminates fabricated by atomic layer deposition for optoelectronic applications. ACS Applied Nano Materials, 5, 17949-17955(2022).

[13] J TAO, H L LU, Y GU et al. Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films. Applied Surface Science, 476, 733-740(2019).

[14] S Y CHU, T H YEH, C T LEE et al. Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors. Materials Science in Semiconductor Processing, 142, 106471(2022).

[15] Y SHEN, H P MA, L GU et al. Atomic-level Sn doping effect in Ga2O3 films using plasma-enhanced atomic layer deposition. Nanomaterials, 12, 4256(2022).

[16] U HARMANCI, M T GULLUOGLU, F ASLAN et al. Solar-blind ultraviolet photodetector based on Ti-doped Ga2O3/Si p-n heterojunction. Journal of Materials Science: Materials in Electronics, 33, 20223-20228(2022).

[17] W M LIU, X D ZHU, J B HE et al. Atomic-layer-Ti-doped Ga2O3 thin films with tunable optical properties and wide ultraviolet optoelectronic responses. Physica Status Solidi-Rapid Research Letters, 15, 2100411(2021).

[18] M BANDI, V ZADE, S ROY et al. Effect of titanium induced chemical inhomogeneity on crystal structure, electronic structure, and optical properties of wide band gap Ga2O3. Crystal Growth & Design, 20, 1422-1433(2020).

[19] V V ATUCHIN, A V KALINKIN, V A KOCHUBEY et al. Spectroscopic ellipsometry and x-ray photoelectron spectroscopy of La2O3 thin films deposited by reactive magnetron sputtering. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 29, 021004(2011).

[20] A J M MACKUS, J R SCHNEIDER, C MACISAAC et al. Synthesis of doped, ternary, and quaternary materials by atomic layer deposition: a review. Chemistry of Materials, 31, 1142-1183(2019).

[21] R O'DONOGHUE, J RECHMANN, M AGHAEE et al. Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition. Dalton Transactions, 46, 16551-16561(2017).

[22] P MANDAL, S ROY, U P SINGH. Investigation on the optical and electrical performance of aluminium doped gallium oxide thin films. Optical and Quantum Electronics, 54, 476(2022).

[23] F ZHANG, K SAITO, T TANAKA et al. Wide bandgap engineering of (AlGa)2O3 films. Applied Physics Letters, 105, 162107(2014).