[1] [1] Ambacher O. Growth and applications of group Ⅲ-nritrides［J］. Journal of Physics D: Applied Physics,1998,31(20): 2653-2710.

[2] [2] Taniyasu Y, Kasu, Makimoto T. An aluminum nitride light-emitting diode with a wavelength of 210 nanometres［J］. Nature, 2006,441(7091): 325-328.

[3] [3] Melo E G, Alayo M I. Photonic band gaps of wurtzite GaN and AlN photonic crystals at short wavelengths［J］. Photonics and Nanostructures-Fundamentals and Applications,2015,14: 35-45.

[5] [5] Lu H Q, Bhat I B, Lee B C, et al. MOCVD growth of GaN on bulk AlN substrates［J］. MRS Online Proceedings Library Archive,1997,482: 277-282.

[7] [7] Singh N B, Berghmans A, Zhang H, et al. Physical vapor transport growth of large AlN crystals［J］. Journal of Crystal Growth, 2003,250(1-2): 107-112.

[8] [8] Bickermann M, Epelbaum B M, Filip O, et al. UV transparent single-crystalline bulk AlN substrates［J］. Physical Status Solidi,2011,7(1): 21-24.

[9] [9] Hartmann C, Wollweber J, Seitz C, et al. Homoepitaxial seeding and growth of bulk AlN by sublimation［J］. Journal of Crystal Growth, 2008,310(5): 930-934.

[10] [10] Hartmann C, Dittmar A, Wollweber J, et al. Bulk AlN growth by physical vapor transport［J］. Semiconductor Science and Technology, 2014,29(8): 1-10.

[11] [11] Slack G A, McNelly T F. Growth of high purity AlN crystals［J］. Journal of Crystal Growth,1976,34(2): 263-279.

[12] [12] Zhuang D, Herro Z G, Schlesser R, et al. Seeded growth of AlN single crystals by physical vapor transport［J］. Journal of Crystal Growth,2006,287(2): 372-375.

[13] [13] Wang Z H, Wang Q K, He G D, et al. Characterization of freestanding AlN single crystals grown through a novel approach using the PVT method［J］. Rare Metal Materials and Engineering,2019,48(03): 403-408.

[14] [14] Wang Q K, Huang J L, Wang Z H, et al. Anisotropic three-dimensional thermal stress modeling and simulation of homoepitaxial AlN single crystal growth by the physical vapor transport method［J］. Crystal Growth & Design,2018,18(5): 2998-3007.

[16] [16] Liu L H, Edgar J H. A global growth rate mode for aluminum nitride sublimation［J］. Journal of The Electrochemical Society,2002,149(1): 12-15.

[17] [17] Yazdi G R, Vasiliauskas R, Syvajarvi M, et al. Fabrication of free-standing AlN crystals by controlled microrod growth［J］. Journal of Crystal Growth,2008,310(5): 935-939.

[18] [18] Guguschev C, Dittmar A, Moukhina E, et al. Growth of bulk AlN single crystals with low oxygen content taking into account thermal and kinetic effects of oxygen-related gaseous species［J］. Journal of Crystal Growth,2012,360: 185-188.

[19] [19] Bickermann M, Epelbaum B M, Winnacker A. Structural properties of AlN crystals grown by physical vapor transport［J］. Phycica Status Solidi(c), 2003,2(7): 2044-2048.

[20] [20] Filip O, Epelbaum M, Bickermann M, et al. Effects of growth direction and polarity on bulk aluminum nitride crystal properties［J］. Journal of Crystal Growth, 2011,318(1): 427-431.