Electro-Optic Technology Application, Volume. 36, Issue 6, 45(2021)
Novel Photoelectric Memristor Based on PVK/ZnO Heterostructure
[1] [1] MANIPATRUNI S, NIKONOV D E, YOUNG I A, et al. Beyond CMOS computing with spin and polarization[J]. Nature Physics, 2018, 14(4): 338-343.
[2] [2] ZIDAN M A, STRACHAN J P, LU W D, et al. The future of electronics based on memristive systems[J]. Nature Electronics, 2018, 1(1): 22-29.
[3] [3] CHEN Z L, CHENG C T, DONG Y B, et al. Memristor brain chips and artificial intelligence[J]. Micro-nano electronics and intelligent manufacturing, 2019, 1(4): 58-70.
[4] [4] BERZINA T, SMERIERI A, BERNABO M, et al. Optimization of an organic memristor as an adaptive memory element[J]. Journal of Applied Physics, 2009, 105(12): 507.
[5] [5] MENG F, JIANG L, ZHENG K, et al. Protein-based memristive nano devices.[J]. Small, 2011, 7(21): 3016-3020.
[6] [6] KONDO T, SANG M L, MALICKI M, et al. A nonvolatile organic memory device using ITO surfaces modified by Ag-nanodots[J]. Advanced Functional Materials, 2008, 18(7): 1112-1118.
[7] [7] LAI Y S, TU C H, KWONG D L, et al. Bistable resistance switching of poly (N-vinylcarbazole) films for nonvolatile memory applications[J]. Applied Physics Letters, 2005, 87(12): 5655.
[8] [8] CHEN J Y, HSIN C L, HUANG C W, et al. Dynamic evolution of conducting nanofilament in resistive switching memories[J]. Nano Letters, 2013, 13(8): 3671.
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YIN Yue, QI Haobo, LIU Lei. Novel Photoelectric Memristor Based on PVK/ZnO Heterostructure[J]. Electro-Optic Technology Application, 2021, 36(6): 45
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Received: Nov. 1, 2021
Accepted: --
Published Online: Feb. 15, 2022
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