In recent years, researchers have proposed a variety of photoelectrical memristor structures to simulate light-synapse in living organisms through continuous research and innovation, which are used in the field of neuromorphic computing. Among them, organic photoelectric memristor devices have the characteristics of low cost, simple preparation process and high flexibility, and have gradually become a research hotspot in this field, attracting more and more researchers. The organic polymer PVK (polyvinylcarbazole), its functional layer material PVK organic photoelectric mersister, has excellent photovoltaic performance and high hole mobility, but it has poor stability and low repeatability due to the unclear mechanism of organic resistance transformation and poor material stability. Based on Al/PVK/W/Si photoelectric memristor, zinc oxide functional layer with high stability and high electron mobility is introduced to improve the related performance of PVK photoelectric memristor. The prepared Al/PVK/ZnO/W/Si photoelectric memristor is tested in detail, and is compared with the traditional Al/PVK/W/Si photoelectric memristor. The experimental results show that the stability of the new structure is significantly improved, and the repeatability is enhanced.