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Optoelectronics Letters, Volume. 12, Issue 3, 178(2016)

GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography

Wei-hua SANG1... Lu LIN1, Long WANG2, Jia-hua MIN1, Jian-jun ZHU3 and Min-rui WANG4,* |Show fewer author(s)
Author Affiliations
  • 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
  • 2School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, China
  • 3Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 4Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    SANG Wei-hua, LIN Lu, WANG Long, MIN Jia-hua, ZHU Jian-jun, WANG Min-rui. GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography[J]. Optoelectronics Letters, 2016, 12(3): 178

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    Paper Information

    Received: Dec. 9, 2015

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Min-rui WANG (mrwang2007@sinano.ac.cn)

    DOI:10.1007/s11801-016-5251-y

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology