Acta Optica Sinica, Volume. 35, Issue 12, 1216001(2015)
First Principle Study about the Effect of Pb-Doping on Optical Band Gap and Conductivity of InI
[1] [1] Jones R E, Templeton D H. The crystal structure of iodium (i) iodide[J]. Acta Cryst, 1955, 8(12): 847.
[2] [2] Oondera T, Hitomi K, Shoji T. Fabrication of indium iodide X-and gamma-ray detectors[J]. IEEE Trans Nucl Sci, 2006, 53(5): 3055- 3059.
[3] [3] Shah K S, Moy L P, Zhang J, et al.. InI photodetectors for scintillation spectroscopy[C]. Proc SPIE, 1992: 161-165.
[4] [4] Kolinko M I. Electronic energy-structure calculations for orthorhombic InI single crystals[J]. J Phys, 1994, 6(1): 183-202.
[5] [5] Nicoara I, Nicoara D, Bertorello C, et al.. Czochralski growth of indium iodide and other wide bandgap semiconductor compounds[C]. MRS Spring Meeting, 2011, 1341: mrss11-1341-u09-01.
[6] [6] Hossain A, Kim K, Bolotnikov A E, et al.. Characterization of indium iodide (InI) crystal for room temperature radiation detector Applications[C]. SORMA West, 2012: 5P-20.
[7] [7] Biswas K, Du M H. First principles study of native defects in InI[J]. J Appl Phys, 2011, 109(11):113518.
[8] [8] Zhang Chunhong, Zhang Zhongzhneg, Deng Yongrong, et al.. First principle study on electronic structure and optical properties of β- FeSi2 with doping rare earth (Y、Ce)[J]. Acta Optica Sinica, 2015, 35(1): 0116001.
[9] [9] Li Guoqiang. Preparation and Annealing modified of Cd1-xZnxTe crystals[D]. Xian: Northwestern Polytechnical University, 2001.
[10] [10] Xu Zhaopeng, Wang Yongzhen, Zhang Wei, et al.. First-principle study on the effects of Tl doping on the band gap and the band-edge of optical absorption of InI[J]. Acta Phys Sin, 2014, 63(14): 147102.
[11] [11] Wang Yongzhen, Xu Zhaopeng, Zhang Wenxiu, et al.. First-principles study on the effect of Ge-doping on the conductivity of InI[J]. Acta Phys Sin, 2014, 63(23): 237101.
[12] [12] He Yi, Zhu Shifu, Zhao Beijun, et al.. Research on new method for growing lead iodide (PbI2) single crystal[J]. J Synth Cryst, 2007, 36 (2): 289-292.
[13] [13] Zhukovskii Y F, Kotomin E A, Fuks D, et al.. First principles slab calculations of the regular Cu/MgO(0 0 1) interface[J]. Surf Sci, 2004, 566: 122-129.
[14] [14] Chahed A, Benhelal O, Laksari S, et al.. First-principles calculations of the structural, electronic and optical properties of AgGaS2 and AgGaSe2[J]. Physica B, 2005, 367(1): 142-151.
[15] [15] Perdew J P, Chevary J A, Vosko S H. Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation[J]. Phys Rev B, 1992, 46(11): 6671-6687.
[16] [16] Deng Z H, Yan J F, Zhang F C, et al.. First-principle calculation of effects of Sb doping on electrical conductivity of SnO2 transparent film[J]. Acta Photonica Sinica, 2007, 36(S1): 110-115.
[18] [18] Fan Menghui, Cai Xunming, Cen Weifu, et al.. First-principles calculation of electronic structure and optical properties of monolayer MoS1.89X0.11[J]. Laser & Optpelectronics Progress, 2015, 52(5): 051602.
[20] [20] Vanderbih D. Soft self-consistent pseudopotentials in a generalized eigenvalue formalism[J]. Phys Rev B, 1990, 41(11): 7892-7895.
[21] [21] Sorescu M, Diamandescu L, Tarabsanu M D, et al.. Nanocrystalline rhombohedral In2O3 synthesized by hydrothermal and postannealing pathways[J]. J Mat Sci, 2004, 39(2): 675-677.
[22] [22] Perdew J P, Mel L. Physical content of the exact Kohn-Sham orbital energies: Band gaps and derivative discontinuities[J]. Phys Rev Lett, 1983, 51(20): 1884-1887.
[23] [23] Liu Enke, Zhu Bingsheng, Luo Jinsheng. Semiconductor Physics[M]. Xi′an: Xi′an Jiaotong University Press, 1998: 123.
[24] [24] Han T, Meng F Y, Zhang S, et al.. Band gap and electronic properties of wurtzite-structure ZnO co-doped with IIA and IIIA[J]. J Appl Phys, 2011, 110(6): 063724.
[25] [25] Ji Zhenguo. Semiconductor Physics[M]. Zhejiang: Zhejiang University Press, 2005: 134.
[26] [26] Zheng Shuwen, Fan Guanghan, He Miao, et al.. Theoretical study of the effect of W-doping on the conductivity of β-Ga2O3[J]. Acta Phys Sin, 2014, 63(5): 057102.
[27] [27] Zhong Zhiyong. Effect of ionization on crystal growing[J]. J Synth Cryst, 2003, 32(2): 156-161.
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Xu Zhaopeng, Zhang Wenxiu, Wang Yongzhen, Zhang Lei, Ji Liangliang. First Principle Study about the Effect of Pb-Doping on Optical Band Gap and Conductivity of InI[J]. Acta Optica Sinica, 2015, 35(12): 1216001
Category: Materials
Received: Jun. 5, 2015
Accepted: --
Published Online: Dec. 10, 2015
The Author Email: Zhaopeng Xu (xuzhaopeng@ysu.edu.cn)