Chinese Physics B, Volume. 29, Issue 9, (2020)
Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation
Fig. 1. (a) Typical high-frequency
Fig. 1. (a) Si 2p, (b) N 1s, (c) O 1s, and (d) C 1s XPS spectrums of NO-annealed sample at sputtering time of 756 s.
Fig. 2. (a) Quasi-static
Fig. 2. (a) Si 2p, (b) N 1s, (c) O 1s, and (d) C 1s XPS spectrums of electron-irradiated NO annealed sample for sputtering time of 756 s.
Fig. 3. Si 2p XPS spectra of the SiO2/SiC interfaces after (a) being annealed in NO atmosphere and (c) electrons irradiated NO annealing at sputtering time of 612 s. C 1s XPS spectra of (b) NO-annealed sample and (d) electron-irradiated NO annealed sample at sputtering time of 756 s.
Fig. 4. (a) Typical current–electric field characteristics of these irradiated SiC MOS capacitors; (b) box chart plot of breakdown electric field determined from
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Ji-Long Hao, Yun Bai, Xin-Yu Liu, Cheng-Zhan Li, Yi-Dan Tang, Hong Chen, Xiao-Li Tian, Jiang Lu, Sheng-Kai Wang. Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation[J]. Chinese Physics B, 2020, 29(9):
Received: Mar. 18, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Bai Yun (xyliu@ime.ac.cn)