Chinese Physics B, Volume. 29, Issue 9, (2020)
Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation
Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated. The density of interface traps after being irradiated by 100-kGy electrons decreases by about one order of magnitude, specifically, from 3×1012 cm-2?eV-1 to 4×1011 cm-2?eV-1 at 0.2 eV below the conduction band of 4H-SiC without any degradation of electric breakdown field. Particularly, the results of x-ray photoelectron spectroscopy measurement show that the C–N bonds are generated near the interface after electron irradiation, indicating that the carbon-related defects are further reduced.
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Ji-Long Hao, Yun Bai, Xin-Yu Liu, Cheng-Zhan Li, Yi-Dan Tang, Hong Chen, Xiao-Li Tian, Jiang Lu, Sheng-Kai Wang. Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation[J]. Chinese Physics B, 2020, 29(9):
Received: Mar. 18, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Bai Yun (xyliu@ime.ac.cn)