Fig. 1. (Color online) (a) Chemical structures of the polymer donor PTzBI-oF and the polymer acceptor PS1. (b) Schematic diagram of all-PSCs fabricated by the blend casting (BC) and sequential deposition (SD) methods.

Fig. 2. (Color online) (a) Absorption spectra of neat PTzBI-oF and PS1 films without and with DBE additives. (b) Absorption profiles of blend-casting PTzBI-oF:PS1 and sequentially deposited PTzBI-oF/PS1 blend film. (c, d) Photoluminescent spectra of PTzBI-oF, PS1, blend-casting PTzBI-oF:PS1 and sequentially deposited PTzBI-oF/PS1 film, excited at 620 and 775 nm.

Fig. 3. (Color online) (a)J–V characteristics, (b) EQE spectra and corresponding integratedJ_SC curves of sequential deposition and blend casting all-PSCs.

Fig. 4. (Color online) (a) Impedance spectra with the equivalent circuits as inset, (b) normalized transient photovoltage and (c) transient photocurrent curves, (d)J_ph−V_eff characteristics, (e) dependence ofV_OC and (f)J_SC on light intensity (P_light) measurements for PTzBI-oF:PS1 based devices constructed by sequential deposition and blend casting methods.

Fig. 5. (Color online) GIWAXS (a) 2D images and (b) sector averaged curves in the IP (dotted lines) and OOP (solid lines) directions. (c) Summary of the peak area of lamellar stacking and π−π stacking reflections. (d) Pole figure of π−π stacking reflections, where the azimuthal angle χ is zero in theq_xy direction and 90^o in theq_z direction.

Fig. 6. (Color online) Normalized parameters for optimized PTzBI-oF:PS1 based all-PSCs fabricated by sequential deposition and blend casting methods continuously thermal aging at 65 °C.