[1] [1] ROWSEY N L. Quantitative modeling of total ionizing dose reliability effects in device silicon dioxide layers[M]. Gainesville, USA:University of Florida, 2012.

[3] [3] HJALMARSON H P, PEASE R L, DEVINE R A. Calculations of radiation dose-rate sensitivity of bipolar transistors[J]. IEEE Transactions on Nuclear Science, 2009, 55(6):3009-3015.

[4] [4] CHEN X, BARNABY H, VERMEIRE B, et al. Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides[J]. IEEE Transactions on Nuclear Science, 2007, 54(60):1913–1919.

[5] [5] OLDHAM T R. Ionizing radiation effects in MOS oxides[M]. Singapore:World Scientific Press, 1999.

[6] [6] RASHKEEV S, FLEETWOOD D, SCHRIMPF R, et al. Defect generation by hydrogen at the Si-SiO2 interface[J]. Physical Review Letters, 2001, 87(16):165506.

[7] [7] BOCH J, SAIGN F, SCHRIMPF R D, et al. Physical model for the low-dose-rate effect in bipolar devices[J]. IEEE Transactions on Nuclear Science, 2006, 53(6):3655-3660.

[8] [8] PEASE R L, ADELL P C, RAX B G, et al. The effects of hydrogen on the Enhanced Low Dose Rate Sensitivity(ELDRS) of bipolar linear circuits[J]. IEEE Transactions on Nuclear Science, 2008, 55(6):3169-3173.

[9] [9] HJALMARSON H P, PEASE R L, WITCZAK S C, et al. Mechanisms for radiation dose-rate sensitivity of bipolar transistors[J]. IEEE Transactions on Nuclear Science, 2003, 50(6):1901-1909.

[10] [10] GRISCOM D L, FRIEBELE E J. Fundamental radiation-induced defect centers in synthetic fused silicas:atomic chlorine, delocalized E0 centers, and a triplet state[J]. Physical Review B, 1986, 34(11):7524-7533.

[11] [11] ZHANG Linbo. A parallel algorithm for adaptive local refinement of tetrahedral meshes using bisection[J]. Numerical Mathematics:Theory, Methods and Applications, 2009(1):69-93.

[12] [12] ESQUEDA I S. Modeling of total ionizing dose effects in advanced complementary metal oxide-semiconductor technologies[D]. Arizona State, USA:Arizona State University, 2011.

[13] [13] ROWSEY N L, LAW M E, SCHRIMPF R D, et al. A quantitative model for eldrs and degradation effects in irradiated oxides based on first principles calculations[J]. IEEE Transactions on Nuclear Science, 2011, 58(6):2937-2944.

[14] [14] XU Jingjie, MA Zhaocan, LI Hongliang, et al. A multi-time-step finite element algorithm for 3D simulation of coupled drift-diffusion-reaction process in total ionizing dose effect[J]. IEEE Transactions on Semiconductor Manufacturing, 2018, 31(1):183-189.

[15] [15] ENLOW E W, PEASE R L, COMBS W, et al. Response of advanced bipolar processes to ionizing radiation[J]. IEEE Transactions on Nuclear Science, 1991, 38(6):1342–1351.