Fig. 1. SAGCM laminated structure and internal electric-field distribution

Fig. 2. Parameter relationships. (a) Relationship between PDE and over-bias at different temperatures[15]; (b) relationship between DCR and PDE for devices with different thicknesses of multiplication layers and fixed PDE[16]

Fig. 3. Parameter relationships. (a) Relationship between DCR and over-bias for devices with different thicknesses of multiplication layers; (b) relationship between DCR and temperature for devices with different thicknesses of multiplication layers at 4 V over-bias[15]

Fig. 4. Device platform design and array image of InGaAsP/InP SPAD. (a) Schematic of epitaxial layer and mesa structure of InGaAsP/InP SPAD designed by MIT; (b) micrograph of individual pixel; (c) micrograph of 4×4 detector array[24]

Fig. 5. APD/CMOS prepared by MIT. (a) Micrograph of bridged 32×32 APD/CMOS array; (b) micrograph of individual pixel in APD/CMOS array at high magnification[26]

Fig. 6. Related parameters and cross-sectional schematic of GM-APD. (a) PDE and crosstalk as functions of over-bias of GM-APD; (b) cross-sectional schematic of InP GM-APD array combined with MLA[33]

Fig. 7. Schematic of focal plane array structure of InP GM-APD. (a) Structure of InGaAs(P)/InP GM-APD; (b) reverse welding GM-APD focal plane array

Fig. 8. 1×16 InGaAs/InP SPAD line array[38]

Fig. 9. Schematic of optical path between two pixels. (a) Without metal trenches; (b) with metal trenches[38]

Fig. 10. InGaAs/InP avalanche photodiode. (a) Schematic of structure; (b) photograph of 8×8 array[39]