Photonics Research, Volume. 10, Issue 12, 2809(2022)

Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale Spotlight on Optics

A. Pandey, J. Min, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, and Z. Mi*
Author Affiliations
  • Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
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    References(54)

    [24] A. Kikuchi, M. Tada, K. Miwa, K. Kishino. Growth and characterization of InGaN/GaN nanocolumn LED. Proc. SPIE, 6129, 612905(2006).

    [38] C. Zhao, T. K. Ng, N. Wei, A. Prabaswara, M. S. Alias, B. Janjua, C. Shen, B. S. Ooi. Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters. Nano Lett., 16, 1056-1063(2016).

    [40] B. Park, J. K. Lee, C. T. Koch, M. Wölz, L. Geelhaar, S. H. Oh. High‐resolution mapping of strain partitioning and relaxation in InGaN/GaN nanowire heterostructures. Adv. Sci., 9, 2200323(2022).

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    A. Pandey, J. Min, Y. Malhotra, M. Reddeppa, Y. Xiao, Y. Wu, Z. Mi. Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale[J]. Photonics Research, 2022, 10(12): 2809

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    Paper Information

    Category: Optoelectronics

    Received: Aug. 16, 2022

    Accepted: Oct. 16, 2022

    Published Online: Nov. 24, 2022

    The Author Email: Z. Mi (ztmi@umich.edu)

    DOI:10.1364/PRJ.473318

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