Wafer-level substrate-free YIG single crystal film for a broadband tunable terahertz isolator

Xilai Zhang; Dan Zhao; Ding Zhang; Qiang Xue; Fei Fan; Yulong Liao; Qinghui Yang; Qiye Wen

doi:10.1364/PRJ.509876

Photonics Research, Volume. 12, Issue 3, 505(2024)

Wafer-level substrate-free YIG single crystal film for a broadband tunable terahertz isolator Editors' Pick

Xilai Zhang^1、†, Dan Zhao^2、†, Ding Zhang¹, Qiang Xue^1,3, Fei Fan^2,4, Yulong Liao¹, Qinghui Yang¹, and Qiye Wen^1,3、*

¹School of Electronic Science and Engineering, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

²Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Institute of Modern Optics, Nankai University, Tianjin 300350, China

³Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China

⁴e-mail: fanfei_gdz@126.com

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Figures & Tables(9)

Fig. 1. Schematic diagram. (a) Polarized THz-TDS system with an adjustable magnetic field. (b) THz wave transfer through the sample. (c) Magnetic Faraday rotation effect. (d) Device formed after packaging a sample.

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Fig. 2. (a) Photograph of La:YIG sample. (b) SEM image. (c) XRD pattern of La:YIG and GGG film. (d) Hysteresis curve of a La:YIG sample.

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$(a) Time domain THz pulses of air and La:YIG film on GGG substrate. (b) Effective refractive index of La:YIG. (c) Transmission and absorption coefficient of one sample under different EMFs. (d) Transmission and absorption coefficient of different numbers of samples (stacked together).$

Fig. 3. (a) Time domain THz pulses of air and La:YIG film on GGG substrate. (b) Effective refractive index of La:YIG. (c) Transmission and absorption coefficient of one sample under different EMFs. (d) Transmission and absorption coefficient of different numbers of samples (stacked together).

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Fig. 4. (a), (b) Phase change of left-handed rotation and right-handed rotation of one La:YIG sample at different EMFs. (c) Faraday rotation angle spectra of one La:YIG sample under the EMF range from −0.22 to 0.22 T. (d) Verdet constant spectrum of La:YIG calculated from the polarization rotation angle at an EMF of 0.22 T.

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Fig. 5. (a), (b) Phase change of left-handed rotation and right-handed rotation of different numbers of YIG samples (stacked together) under ±0.22 T. (c) Faraday rotation angle spectra of different numbers of YIG samples (stacked together) under ±0.22 T. (d) Faraday rotation angle changes with the number of sample stacks. (e), (f) Polarization states of the transmitted THz wave through one to four stacked La:YIG films at 0.6 THz under ±0.22 T.

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Fig. 6. (a) ±45° LP time domain THz pulses of four stacked La:YIG films under the EMF of ±0.22 T. (b) −45° transmission under the EMF of ±0.22 T. (c) +45° transmission under the EMF of ±0.22 T. (d) Isolation of four stacked La:YIG films under the EMF of 0.22 T.

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Fig. 7. (a), (b) Transmission of eight La:YIG samples (stacked together) with ±45° linearly polarized light. (c) Faraday rotation angle spectra of eight La:YIG samples (stacked together) under the EMF range from −0.26 to 0.26 T. (d) Isolation of eight stacked La:YIG films under the EMF range from 0 to 0.26 T. (e), (f) Polarization states of the transmitted THz wave through eight stacked La:YIG films at 0.6 THz from 0 to ±0.26 T. (g) Faraday rotation angle spectrum of eight La:YIG samples changes with magnetic field. (h) Isolation of eight stacked La:YIG films changes with magnetic field.

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Table 1. Optimized Growth Parameters for La:YIG Films
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Table 1. Optimized Growth Parameters for La:YIG Films
Flux Composition Temperature (°C) Growth Rate ( $μm \cdot \min^{- 1}$ ) Rotation Rate ( ${r \cdot \min}^{- 1}$ ) Growth Time (min) Thickness (μm)
${La}_{x} Y_{3 - x} {Fe}_{5} O_{12}$ $960 \pm 0.5$ 0.6 60 508 305

Table 2. Y, La, Fe, O Mole Fractions Obtained by EPMA from the Surface of La:YIG Sample (in %)
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Table 2. Y, La, Fe, O Mole Fractions Obtained by EPMA from the Surface of La:YIG Sample (in %)
Position Y La Fe O Pb
1 14.6615 0.1710 16.9854 68.1821 0
2 14.6511 0.1648 17.0358 68.1483 0
3 13.9017 0.1639 14.5612 71.1767 0.1965
Average 14.4048 0.1666 16.2241 69.1690 0.0655

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Xilai Zhang, Dan Zhao, Ding Zhang, Qiang Xue, Fei Fan, Yulong Liao, Qinghui Yang, Qiye Wen. Wafer-level substrate-free YIG single crystal film for a broadband tunable terahertz isolator[J]. Photonics Research, 2024, 12(3): 505

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