Acta Physica Sinica, Volume. 68, Issue 20, 207302-1(2019)

First-principles study on the diffusion dynamics of Al atoms on Si surface

Heng Zhang1,2, Yan Huang1, Wang-Zhou Shi2, Xiao-Hao Zhou1、*, and Xiao-Shuang Chen1
Author Affiliations
  • 1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2School of Mathematics and Physics, Shanghai Normal University, Shanghai 200234, China
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    Figures & Tables(10)
    The geometry of the Si(100) surface, in which dark blue and red are used to mark the Si atoms in the high and low positions in the Si-Si dimer: (a) Top view; (b) side view.Si(100)表面的几何结构, 其中深蓝色和红色用于标记Si-Si二聚体中高和低两种位置的Si原子 (a)俯视图; (b)侧视图
    Al atom adsorption on the clean Si (100) Tr site, H-terminate Si (100) H site and Cl-terminate Si (100) surface H site: (a) Top view; (b) side view; (c) differential charge image.Al原子吸附在清洁Si(100) Tr位点、H钝化Si(100) H位点和Cl钝化Si(100) 表面H位点 (a)俯视图; (b)侧视图; (c)差分电荷密度图
    Bader charge transfer for Al atom adsorption on (a) the clean Si (100) Tr site, (b) H-terminate Si (100) H site and (c) Cl-terminate Si (100) surface H site.Al原子吸附在(a)清洁、(b)氢化、(c)氯化Si(100)表面后差分电荷图和Bader电子转移情况
    Al atoms on clean, H-terminate and Cl-terminate Si(100) surfaces: (a) Diffusion paths; (b) diffusion barriers.Al原子在清洁、H钝化、Cl钝化Si(100)表面 (a)扩散路径和; (b)扩散能垒
    (a) and (b) are the top and side views of the clean Si (111) surface, respectively; T1, B2, H3 and T4 are the four highly symmetric sites of adsorption of Al atoms on the Si(111) surface.(a)和(b)分别为清洁Si(111)表面俯视图和侧视图T1, B2, H3和T4为Al原子在Si(111)表面的吸附的四个高对称位
    Al atom adsorbed on clean, H-terminate, Cl-terminate Si(111) surface: (a) Top view; (b) side view; (c) differential charge imageAl原子吸附在清洁、H钝化、Cl钝化Si(111)表面的(a)俯视图, (b)侧视图, (c)差分电荷密度图
    Al atoms on clean, H-terminate, and Cl-terminate Si(111) surfaces: (a) Diffusion paths; (b) diffusion barriers.Al原子在清洁、H钝化、Cl钝化Si(111)表面 (a)扩散路径; (b)扩散能垒
    • Table 1.

      Adsorption energy Ead(eV) and structural parameters of Al atom adsorbed on clean, H-terminate and Cl-terminate Si(100) surface; Si—Si is the bond length of dimer Si—Si, Si—Aladjacent is the distance between the Al atom and the adjacent Si atom.

      Al原子吸附在清洁、H钝化和Cl钝化Si(100)表面的吸附能Ead(eV)和结构参数; 其中Si—Si为二聚体Si—Si的键长, Si—Aladjacent为Al原子与邻近Si原子之间的距离

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      Table 1.

      Adsorption energy Ead(eV) and structural parameters of Al atom adsorbed on clean, H-terminate and Cl-terminate Si(100) surface; Si—Si is the bond length of dimer Si—Si, Si—Aladjacent is the distance between the Al atom and the adjacent Si atom.

      Al原子吸附在清洁、H钝化和Cl钝化Si(100)表面的吸附能Ead(eV)和结构参数; 其中Si—Si为二聚体Si—Si的键长, Si—Aladjacent为Al原子与邻近Si原子之间的距离

      Si(100) surfaceSiteEads/eV Si—Si/ÅSi—Aladjacent
      BareTr4.012.772.45
      M3.962.432.52
      H3.632.452.45
      H-terminateTr1.542.412.69
      T1.502.402.69
      H1.372.402.98
      Cl-terminateT2.032.422.87
      M1.172.401.17
      B2.042.424.09
      H1.802.392.83
    • Table 2.

      Al atom adsorption in the clean, H-terminate, Cl-terminate Si (111) geometric site, where Eads is the adsorption energy of the adjacent site; d1, d2 and d3 are the distance between the Al atom and the adjacent three Si atoms, h is the distance between the Al atom and the adjacent Si atom in the vertical direction.

      Al原子吸附在清洁、H钝化、Cl钝化Si(111)的几何位点, 其中Eads为对应位点的吸附能, d1, d2, d3为Al原子与邻近三个Si原子之间的距离, h为竖直方向Al原子与邻近Si原子之间的距离

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      Table 2.

      Al atom adsorption in the clean, H-terminate, Cl-terminate Si (111) geometric site, where Eads is the adsorption energy of the adjacent site; d1, d2 and d3 are the distance between the Al atom and the adjacent three Si atoms, h is the distance between the Al atom and the adjacent Si atom in the vertical direction.

      Al原子吸附在清洁、H钝化、Cl钝化Si(111)的几何位点, 其中Eads为对应位点的吸附能, d1, d2, d3为Al原子与邻近三个Si原子之间的距离, h为竖直方向Al原子与邻近Si原子之间的距离

      Si(111) surfaceSiteEads/eV d1d2d3h
      BareT44.512.552.552.552.57
      H34.352.522.522.525.37
      H-terminateT41.363.093.063.052.71
      H31.132.932.952.925.76
      Cl-terminateT42.034.274.284.264.38
      H31.994.084.144.187.35
    • Table 3.

      Diffusion path and diffusion energy of Al atom adsorbed on clean, H-terminate, Cl-terminate Si(100) and Si(111) surfaces.

      Al原子吸附在清洁、H钝化、Cl钝化Si(100)和Si(111)表面的扩散路径和扩散能垒

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      Table 3.

      Diffusion path and diffusion energy of Al atom adsorbed on clean, H-terminate, Cl-terminate Si(100) and Si(111) surfaces.

      Al原子吸附在清洁、H钝化、Cl钝化Si(100)和Si(111)表面的扩散路径和扩散能垒

      TypeSi(100)Si(111)
      BareH-terminateCl-terminateBareH-terminateCl-terminate
      PathTrMH$H'$H$H'$T4H3T4H3T4H3
      Eads/eV 0.600.380.130.650.050.14
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    Heng Zhang, Yan Huang, Wang-Zhou Shi, Xiao-Hao Zhou, Xiao-Shuang Chen. First-principles study on the diffusion dynamics of Al atoms on Si surface[J]. Acta Physica Sinica, 2019, 68(20): 207302-1

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    Paper Information

    Received: May. 22, 2019

    Accepted: --

    Published Online: Sep. 17, 2020

    The Author Email:

    DOI:10.7498/aps.68.20190783

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