Chinese Journal of Quantum Electronics, Volume. 23, Issue 4, 565(2006)

NC-Si clusters formed in thermally annealed A-Si∶H films

Qing XUE*
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    References(6)

    [2] [2] Canham L T. Silicon quantum w ire array fabrication by electrochem ical and chemical dissolution of wafers [J].Appl. Phys. Lett.,1990,57(10): 1046-1048.

    [3] [3] Cullis G,Canham L T,Calcott P D J. The structural and luminescence properties of porous silicon [J].J. Appl. Phys.,1997,82(3): 909-965.

    [4] [4] Huang Y M. Laser light scattering characterization of particle size distribution in porous silicon [J].Solid State Commun.,1996,97(1): 33-37.

    [5] [5] Cheng H C,Huang C Y,Wang F S,et al. Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing [J].Jpn. J. Appl. Phys.,2000,39(LAB): LI9-L21.

    [6] [6] Iqbal Z,Vepiek S,Webb A P,et al. Ram an-scattering from small particle-size polycrystalline silicon [J].Solid State Commun.,1981,37(12): 993-996.

    [7] [7] Cullity B D,Stock S R. Elements of X-ray Diaffraction [M].New Jersey: Prentice-Hall,2001.

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    XUE Qing. NC-Si clusters formed in thermally annealed A-Si∶H films[J]. Chinese Journal of Quantum Electronics, 2006, 23(4): 565

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    Paper Information

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    Received: --

    Accepted: --

    Published Online: Jun. 13, 2010

    The Author Email: Qing XUE (xueqing232@126.com)

    DOI:

    CSTR:32186.14.

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