Chinese Journal of Quantum Electronics, Volume. 23, Issue 4, 565(2006)

NC-Si clusters formed in thermally annealed A-Si∶H films

Qing XUE*
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    Nanocrystalline Si clusters can be formed in thermally annealed a-Si: H films. Using different characterizing techniques such as micro-Raman scattering,and X-ray diffraction,we have found nc-Si clusters distribute uniformly in the amorphous matrix of the annealed films with typical sizes in the range of 1.6~15 nm in diameter. The sizes of these silicon particles change sensitively with the temperature ramp rate applied during thermal annealing.

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    XUE Qing. NC-Si clusters formed in thermally annealed A-Si∶H films[J]. Chinese Journal of Quantum Electronics, 2006, 23(4): 565

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    Paper Information

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    Received: --

    Accepted: --

    Published Online: Jun. 13, 2010

    The Author Email: Qing XUE (xueqing232@126.com)

    DOI:

    CSTR:32186.14.

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