Chinese Journal of Quantum Electronics, Volume. 23, Issue 4, 565(2006)
NC-Si clusters formed in thermally annealed A-Si∶H films
Nanocrystalline Si clusters can be formed in thermally annealed a-Si: H films. Using different characterizing techniques such as micro-Raman scattering,and X-ray diffraction,we have found nc-Si clusters distribute uniformly in the amorphous matrix of the annealed films with typical sizes in the range of 1.6~15 nm in diameter. The sizes of these silicon particles change sensitively with the temperature ramp rate applied during thermal annealing.
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XUE Qing. NC-Si clusters formed in thermally annealed A-Si∶H films[J]. Chinese Journal of Quantum Electronics, 2006, 23(4): 565
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Published Online: Jun. 13, 2010
The Author Email: Qing XUE (xueqing232@126.com)
CSTR:32186.14.