Acta Photonica Sinica, Volume. 35, Issue 1, 9(2006)

Study of Thermal Characteristics of 808 nm InGaAsP-InP SQW Lasers

Zhang Yongming1...2,*, Zhong Jingchang1, Lu Guoguang3, Qin Li3, Zhao Yingjie1, Hao yongqin1 and jiang xiaoguang1 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(7)

    [1] [1] Dias J,Elishevich I,Mobarban K,et al. InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metal organic chemical vapor deposition. IEEE Photonics Technology Letters,1994,6(2): 132

    [2] [2] Dias J,Elishevich I,He X,et al. High-power InGaAsP/GaAs 0.8 μm laser diodes and peculiarities of operational characteristics. Appl Phys Lett,1994,65(8): 1004

    [3] [3] Wu X,Lu Z K,Wang Y. Acta Photonics Sinica,2003,32(11): 1308~1311

    [4] [4] Wang Z J,Chen B,Wang W. Acta Photonics Sinica,1997,26(5): 418-421

    [5] [5] Bernd Witzigmann,Mark S Hybertsen. A theoretical investigation of the characteristic temperature T0 for semiconductor laser. IEEE J on Selected Topics in Quantum Electronics,2003,9(3): 807~815

    [6] [6] Masahiko Kondow,Takeshi Kitatani,Kouji Nakahara,et al. Temperature dependence of lasing wavelength in a GaInNAs laser diode. IEEE Photonics Technology Letters,2000,12(7): 777~779

    [7] [7] Toshio Higashi,Tsuyoshi Yamamoto,Shouichi Ogita,et al. Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers. IEEE J Q E,1998,34(9): 1680~1688

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    Zhang Yongming, Zhong Jingchang, Lu Guoguang, Qin Li, Zhao Yingjie, Hao yongqin, jiang xiaoguang. Study of Thermal Characteristics of 808 nm InGaAsP-InP SQW Lasers[J]. Acta Photonica Sinica, 2006, 35(1): 9

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    Paper Information

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    Received: Oct. 25, 2004

    Accepted: --

    Published Online: Jun. 3, 2010

    The Author Email: Yongming Zhang (zymciom@126.com)

    DOI:

    CSTR:32186.14.

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