Semiconductor Optoelectronics, Volume. 45, Issue 1, 79(2024)

Intelligent LED Driver Circuit Based on Bipolar Technology for Optical Isolated IGBT Gate Driver

XU Jian1... DENG Guangping2, PU Xi2, LIU Changju2 and ZHANG Jihua1 |Show fewer author(s)
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    References(3)

    [3] [3] Tavernier F, Steyaert M. High-speed optical receivers with integrated photodiode in 130nm CMOS[J]. IEEE J. Solid-State Circuits, 2009, 44(10): 2856-2867.

    [4] [4] Ramezani M, Salama C A T. A monolithic IGBT gate driver implemented in a conventional 0.8/spl mu/m BiCMOS process[C]// Proc. of the 10th International Symp. on Power Semiconductor Devices and ICs, 1998: 109-112.

    [6] [6] Wang Z, Shi X, Tolbert L M, et al. A di/dt feedback-based active gate driver for smart switching and fast overcurrent protection of IGBT modules[J]. IEEE Trans. on Power Electronics, 2014, 29(7): 3720-3732.

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    XU Jian, DENG Guangping, PU Xi, LIU Changju, ZHANG Jihua. Intelligent LED Driver Circuit Based on Bipolar Technology for Optical Isolated IGBT Gate Driver[J]. Semiconductor Optoelectronics, 2024, 45(1): 79

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    Paper Information

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    Received: Sep. 8, 2023

    Accepted: --

    Published Online: Jun. 25, 2024

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2023090801

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