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Chinese Physics B, Volume. 29, Issue 9, (2020)

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications

Wenqiang Song1... Fei Hou1, Feibo Du1, Zhiwei Liu1,† and Juin J. Liou2 |Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 60054, China
  • 2The College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
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    Figures & Tables(8)
    Cross-sectional views of (a) conventional MLSCR and (b) the proposed EGDTSCR.

    Fig. 1. Cross-sectional views of (a) conventional MLSCR and (b) the proposed EGDTSCR.

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    The current density distributions of EGDTSCR under a 2A-TLP stress at (a) the triggering of the reverse gated diode D1, (b) the triggering of parasitic NPN, and (c) the triggering of SCR path.

    Fig. 2. The current density distributions of EGDTSCR under a 2A-TLP stress at (a) the triggering of the reverse gated diode D1, (b) the triggering of parasitic NPN, and (c) the triggering of SCR path.

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    TCAD simulated current density distributions of the MLSCR after triggering under a 2A-TLP stress.

    Fig. 3. TCAD simulated current density distributions of the MLSCR after triggering under a 2A-TLP stress.

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    Measured TLP I–V curves and leakage currents of the proposed EGDTSCR and MLSCR.

    Fig. 4. Measured TLP I–V curves and leakage currents of the proposed EGDTSCR and MLSCR.

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    The impact ionization of EGDTSCR after the triggering of SCR path.

    Fig. 5. The impact ionization of EGDTSCR after the triggering of SCR path.

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    TLP I–V curves and leakage currents of proposed EGDTSCR with three different L4.

    Fig. 6. TLP I–V curves and leakage currents of proposed EGDTSCR with three different L4.

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    TLP I–V curves and leakage currents of the proposed EGDTSCR with three different L6.

    Fig. 7. TLP I–V curves and leakage currents of the proposed EGDTSCR with three different L6.

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    • Table 1. Key ESD parameters of MLSCR and proposed EGDTSCR with three different L6.

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      Table 1. Key ESD parameters of MLSCR and proposed EGDTSCR with three different L6.

      DeviceL4/μmL6/μmVh/VIt2/A
      MLSCR2–4.312.26
      EGDTSCR_1216.763.08
      EGDTSCR_2227.693.88
      EGDTSCR_32410.473.82
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    Wenqiang Song, Fei Hou, Feibo Du, Zhiwei Liu, Juin J. Liou. Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications[J]. Chinese Physics B, 2020, 29(9):

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    Paper Information

    Received: Mar. 29, 2020

    Accepted: --

    Published Online: Apr. 29, 2021

    The Author Email: Liu Zhiwei (ziv_liu@hotmail.com)

    DOI:10.1088/1674-1056/ab9de6

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology