Chinese Physics B, Volume. 29, Issue 9, (2020)
Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications
A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.
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Wenqiang Song, Fei Hou, Feibo Du, Zhiwei Liu, Juin J. Liou. Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications[J]. Chinese Physics B, 2020, 29(9):
Received: Mar. 29, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Liu Zhiwei (ziv_liu@hotmail.com)