<trans-title xml:lang="en">Heteroepitaxial Diamond Nucleation and Growth on Iridium: First-principle Calculation</trans-title>

Weihua WANG; Leining ZHANG; Feng DING; Bing DAI; Jiecai HAN; Jiaqi ZHU; Yi JIA; Yu Yang

doi:10.15541/jim20230392

Journal of Inorganic Materials, Volume. 39, Issue 4, 416(2024)

Heteroepitaxial Diamond Nucleation and Growth on Iridium: First-principle Calculation

Weihua WANG¹, Leining ZHANG², Feng DING^3、*, Bing DAI^4、*, Jiecai HAN⁴, Jiaqi ZHU⁴, Yi JIA¹, and Yu Yang⁵

¹1. China Aerospace Science and Technology Innovation Research Institute, China Aerospace Science and Technology Corporation, Beijing 100176, China

²2. School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China

³3. Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

⁴4. National Key Laboratory of Special Environment of Composite Technology, Harbin Institute of Technology, Harbin 150001, China

⁵5. Beijing Institute of Control Engineering, Beijing 100190, China

show less

Abstract Get PDF(in Chinese)

Figures & Tables(5)

1. Adsorption modes and behaviors of C atom on Ir substrate

Download full size

View in Article

2. Bonding types of C atoms after the CH₃⁺ ion bombardment with different ion rates

Download full size

View in Article

3. Structure of cluster model of diamond (001) and Ir (001) surface as a function of the alignment angle θ=0°, 10°, 25° and 45°

Download full size

View in Article

4. Binding energy for the diamond-Ir system as a function of the alignment angle θ (a), and SEM surface morphology of diamond grains on Ir (001) surface (b)

Download full size

View in Article

Table 1. Carbon atom number and sp³-bonded carbon number in the a-C:H layer after the CH₃⁺ ion bombardment with different rates

View table

View in Article

Table 1. Carbon atom number and sp³-bonded carbon number in the a-C:H layer after the CH₃⁺ ion bombardment with different rates

Ion rate	0.005 nm/fs		0.011 nm/fs		0.019 nm/fs		0.025 nm/fs		0.030 nm/fs		0.035 nm/fs
NumberStep	Catom	sp³-Catom	Catom	sp³-Catom	Catom	sp³-Catom	Catom	sp³-Catom	Catom	sp³-Catom	Catom	sp³-Catom
2500	4	0	4	0	6	0	6	0	6	0	6	0
5000	9	0	7	1	9	0	11	0	11	0	11	0
7500	6	0	13	1	15	0	15	0	17	0	17	1
10000	-		16	3	21	1	17	2	20	2	23	1
12500			21	4	22	1	18	2	23	0	26	1
15000			17	5	-	-	-		-		-

Tools

Get Citation

Copy Citation Text

Weihua WANG, Leining ZHANG, Feng DING, Bing DAI, Jiecai HAN, Jiaqi ZHU, Yi JIA, Yu Yang. Heteroepitaxial Diamond Nucleation and Growth on Iridium: First-principle Calculation[J]. Journal of Inorganic Materials, 2024, 39(4): 416

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category:

Received: Aug. 30, 2023

Accepted: --

Published Online: Jul. 8, 2024

The Author Email: Feng DING (f.ding@siat.ac.cn), Bing DAI (daib@hit.edu.cn)

DOI:10.15541/jim20230392

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Carbon atom number and sp3-bonded carbon number in the a-C:H layer after the CH3+ ion bombardment with different rates

Table 1. Carbon atom number and sp3-bonded carbon number in the a-C:H layer after the CH3+ ion bombardment with different rates

Table 1. Carbon atom number and sp³-bonded carbon number in the a-C:H layer after the CH₃⁺ ion bombardment with different rates

Table 1. Carbon atom number and sp³-bonded carbon number in the a-C:H layer after the CH₃⁺ ion bombardment with different rates