[1] [1] A. Mooradian, H. Y. Fan. Recombination emission in InSb ［J］. Phys. Rev., 1966, 148(2): 873～885

[2] [2] L. Bechou, O. Rehioui, Y. Deshayes et al.. Measurement of the thermal characteristics of packaged double-heterostructure light emitting diodes for space application using spontaneous optical spectrum properties［J］. Opt. & Laser Technol., 2008, 40(4): 589～601

[3] [3] Shen Haiping, Feng Huajun, Pan Jiangen et al.. Mathematical model for LED spectra and application［C］. About CIE26th-China Illuminating Engineering Society Annual Meeting Proceedings, 2005, 83～85

[4] [4] S. Chhajed, Y. Xi, Th. Gessmann et al.. Junction temperature in light-emitting diodes assessed by different methods ［C］. SPIE, 2005, 5739: 16～24

[5] [5] A. Keppens, W. R. Ryckaert, G. Deconinck et al.. Modeling high power light-emitting diode spectra and their variation with junction temperature ［J］. J. Appl. Phys., 2010, 108(4): 043104

[6] [6] Sheng Xuechu. Optical Spectra and Properties of Semiconductor ［M］. Beijing: Science Press, 1997. 97～111, 277～283

[7] [7] J. L. Balenzategui, A. Marti. Detailed modeling of photon recycling：application to GaAs solar cell ［J］. Solar Energy Materials & Solar Cells, 2006, 90(7-8): 1068～1088

[8] [8] P. Altieri, A. Jaeger, R. Windisch et al.. Internal quantum efficiency of high-brightness AlGaInP light-emitting devices ［J］. J. Appl. Phys., 2005, 98(8): 086101

[9] [9] D. C. Johnson, I. M. Ballard, K. W. J. Barnham et al.. Observation of photon recycling in strain-balanced quantum well solar cells ［J］. Appl. Phys. Lett., 2007, 90(21): 2113505

[10] [10] S. Chhajed, Y. Xi, Y.-L. Li et al.. Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes ［J］. J. Appl. Phys., 2005, 97(5): 054506

[11] [11] Su Liwei, You Da, Cheng Haiying et al.. Characterization of high-power GaN-based green LED on Si substrate［J］. Acta Optica Sinica, 2009, 29(4): 1066～1069

[12] [12] C. Lee, M. Wu, W. Lin. The influence of window layers on the performance of 650 nm AlGaInP/GaInP multi-quantum-well light-emitting diodes ［J］. J. Crystal Growth, 1999, 200(3-4): 382～390

[13] [13] P. X. Li, L. Wang, S. Q. Li et al.. MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications ［J］. Chin. Opt. Lett., 2009, 7(6): 489～491

[14] [14] J. C. Zhang, Y. H. Zhu, T. Egawa et al.. Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes ［J］. Appl. Phys. Lett., 2008, 92(19): 191917

[15] [15] G. X. He, L. H. Zheng. A model for LED spectra at different drive currents ［J］. Chin. Opt. Lett., 2010, 8(11): 1090～1094

[16] [16] L. Li, P. Li, Y. Wen et al.. Temperature dependences of photoluminescence and electroluminescence spectra in light-emitting diodes ［J］. Appl. Phys. Lett., 2009, 94(26): 261103

[17] [17] Y. Xi, J.-Q. Xi, Th. Gessmann et al.. Junction and carrier temperature measurement indeep-ultraviolet light-emitting diodes using three different methods ［J］. Appl. Phys. Lett., 2005, 86(3): 031907

[18] [18] Chen Huanting, Lü Yijun, Chen Zhong et al.. Analysis of thermal spreading boards for high power AlGaInP red LEDs ［J］. Acta Optica Sinica, 2009, 29(3): 805～810