Journal of Atomic and Molecular Physics, Volume. 25, Issue 2, 313(2008)

Measurement of semiconductor bridge plasma temperature using spectroscopic method

[in Chinese]*... [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese] and [in Chinese] |Show fewer author(s)
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    References(3)

    [4] [4] Jongdae Kim,Tae Moon Roh,Kyoung-Ik Cho,et al.Optical characteristics of silicon semiconductor bridges under high current density conditions[J].IEEE Transactions on Electron Devices,2001,48 (5):852

    [5] [5] Jong-Uk Kim,Chong-Ook Park,Myung-Ⅱ Park,et al.Characteristics of semiconductor bridge (SCB) plasma generated in a micro-electro-mechanical system (MEMS)[J].Phys.Lett.A,2002,305:413

    [6] [6] Reif J,Fassel V A,Kniseley R U.Spectroscopic flame temperature measurements and their physical significance-I:theoretical concepts-A critical review[J].Spectrochim.Acta,1973,28:105

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measurement of semiconductor bridge plasma temperature using spectroscopic method[J]. Journal of Atomic and Molecular Physics, 2008, 25(2): 313

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    Paper Information

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    Received: Aug. 8, 2007

    Accepted: --

    Published Online: Aug. 17, 2008

    The Author Email: (zhangwenchao303@yahoo.com.cn)

    DOI:

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