Fig. 1. Concept diagram of SBO chip

Fig. 2. Low loss waveguide. (a) Low loss multimode waveguide^[52]; (b) low skin depth waveguide^[53]; (c) low loss silicon nitride waveguide fabrication process by PECVD^[54]

Fig. 3. Metamaterial mode division multiplexer with gradient refractive index ^[59]. (a) 16 channel configuration schematic of MUX mode; (b) microscope image; (c) SEM image; (d)‒(f) SEM images of coupling region

Fig. 4. 192-channel on-chip reconfigurable optical add-drop multiplexer (ROADM) ^[60]. (a) Microscopic image of ROADM; (b) enlarged schematic of the mode/polarization (de)multiplexer; (c) wavelength-selective optical switch; (d) enlarged schematic of the tunable optical attenuator

Fig. 5. Monolithically integrated silicon-based quantum dot laser^[64]. (a) Schematic of monolithic integration of Ⅲ‒V QD laser edge-coupled silicon waveguide on a SOI platform; (b) top-view SEM image of InAs QD laser array; (c) optical microscope image of integrated chip; (d) 8 inch (1 inch=2.54 cm) SOI wafer and pre-patterned laser trenches and silicon waveguides; (e) microscope image of laser trench aligned with silicon waveguide array; (f) SEM image of silicon grating structure in laser trench; (g) enlarged image of grating

Fig. 6. InP-on-Si laser^[43]. (a) Schematic of the process for fabricating InP-on-Si by ion cutting; (b) wafer-level patterned laser devices based on InP-on-Si substrates; (c) SEM image of cross-section of the laser

Fig. 7. Silicon-based electro-optic modulator. (a) Monolithically integrated microring modulator^[67]; (b) high-speed silicon-based modulator based on slow light waveguide^[68]

Fig. 8. Silicon-based photodetector^[73-74]. (a) Interface diagram of 80 GHz germanium photodiode detector; (b) electron microscope image of detector; (c) bandwidth characteristic; (d) germanium/silicon avalanche photodiode with 1 THz gain‒bandwidth product; (e) two-dimensional section of junction area; (f) electric field distribution in Ge and Si regions under different gaps; (g) different methods for optimizing APD performance; (h) simulated bandwidth and corresponding GBP under different L_p when the gain is 20; (i) microscope image of the fabricated APD

Fig. 9. Monolithically integrated chip^[16,45]. (a) Schematic of cross-sectional view of monolithic integration process; (b) digital circuit area; (c) monolithic integration area of digital, analog, and optoelectronic modules; (d) scanning electron microscope characterization diagram of multi-thickness areas of optoelectronic device film layers; (e) (f) monolithic integration PD, MMR modulator, filter, TIA, and thermal tuning module to realize optical transmission and reception functions

Fig. 10. Schematic of the structure of information society

Fig. 11. The first silicon-based integrated 100 Gbit/s coherent receiving and transmission chip in China^[76]

Fig. 12. oNOC optoelectronic hybrid chip produced by Lightelligence^[21]

Fig. 13. Intel fully integrated optical I/O chiplet^[20]

Fig. 14. 9216-channel lidar system^[85]. (a) Lidar system diagram; (b) lidar engine chip; (c) schematic of optical phased array chip; (d) (e) pin diagrams of CMOS driver chip

Fig. 15. Lidar transmitter chip based on multilayer Si₃N₄-SOI platform^[86]. (a) Schematic of transmitter; (b) chip packaging diagram

Fig. 16. Ultra-low power silicon-based electro-optic modulator for large-scale neural interfaces^[90]. (a) Photovoltaic modulator; (b) device layout; (c) DC transmission spectrum; (d) frequency response of the modulator; (e)‒(g) optical signal transmission diagrams under different drivings

Fig. 17. Silicon-based photoelectric computing primary system^[91]

Fig. 18. Photonic tensor core for in-memory computing using continuous-time data representation^[96]

Fig. 19. Large-scale photonic chiplet Taichi^[97]